FDS8874 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS8874

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm

Encapsulados: SO-8

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FDS8874 datasheet

 ..1. Size:625K  fairchild semi
 fds8874.pdf pdf_icon

FDS8874

April 2007 tm FDS8874 N-Channel PowerTrench MOSFET 30V, 16A, 5.5m Features General Description rDS(on) = 5.5m , VGS = 10V, ID = 16A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.0m , VGS = 4.5V, ID = 15A either synchronous or conventional switching PWM controllers. It has been optimized for l

 8.1. Size:622K  fairchild semi
 fds8876.pdf pdf_icon

FDS8874

April 2007 tm FDS8876 N-Channel PowerTrench MOSFET 30V, 12.5A, 8.2m Features General Description rDS(on) = 8.2m , VGS = 10V, ID = 12.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 10.2m , VGS = 4.5V, ID = 11.4A either synchronous or conventional switching PWM controllers. It has been optimize

 8.2. Size:684K  fairchild semi
 fds8870.pdf pdf_icon

FDS8874

April 2007 tm FDS8870 N-Channel PowerTrench MOSFET 30V, 18A, 4.2m Features General Description rDS(on) = 4.2m , VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 4.9m , VGS = 4.5V, ID = 17A either synchronous or conventional switching PWM controllers. It has been optimized for l

 8.3. Size:652K  fairchild semi
 fds8878.pdf pdf_icon

FDS8874

December 2008 FDS8878 N-Channel PowerTrench MOSFET 30V, 10.2A, 14m Features General Description rDS(on) = 14m , VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 17m , VGS = 4.5V, ID = 9.3A either synchronous or conventional switching PWM controllers. It has been optimized for

MOSTRAR MÁS

Otros transistores... FDS7288N3, FDS7296N3, FDS7760A, FDS7764S, FDS7779Z, FDS7788, FDS8670, FDS8812NZ, 8205A, FDS9412A, FDT3N40TF, FDT461N, FDT55AN06LA0, FDU044AN03L, FDU068AN03L, FDU2572, FDU3580