FDU6612A Todos los transistores

 ..1. Size:122K  fairchild semi
 fdd6612a fdu6612a.pdf

February 2004 FDD6612A/FDU6612A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 30 A, 30 V RDS(ON) = 20 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 28 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate

 ..2. Size:120K  fairchild semi
 fdu6612a.pdf

February 2004 FDD6612A/FDU6612A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 30 A, 30 V RDS(ON) = 20 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 28 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate

 ..3. Size:122K  onsemi
 fdd6612a fdu6612a.pdf

February 2004 FDD6612A/FDU6612A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 30 A, 30 V RDS(ON) = 20 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 28 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate

 9.1. Size:83K  fairchild semi
 fdd6644 fdu6644.pdf

April 2001 FDD6644/FDU6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 67 A, 30 V. RDS(ON) = 8.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 10.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been opt

 9.2. Size:385K  fairchild semi
 fdu6676as.pdf

April 2008 tm FDU6676AS N-Channel PowerTrench SyncFET 30V, 90A, 5.8m General Description Features The FDU6676AS is designed to replace a single RDS(ON) = 5.8m Max, VGS = 10V MOSFET and Schottky diode in synchronous DC/DC RDS(ON) = 7.3m Max, VGS = 4.5V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

 9.3. Size:118K  fairchild semi
 fdu6680.pdf

November 2004 FDD6680 / FDU6680 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild 46 A, 30 V RDS(ON) = 10 m @ VGS = 10 V Semiconductor s advanced PowerTrench process that RDS(ON) = 15 m @ VGS = 4.5 V has been especially tailored to minimize the on state resistance and yet maintain low gate charge for Low ga

 9.4. Size:83K  fairchild semi
 fdd6692 fdu6692.pdf

April 2001 FDD6692/FDU6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 54 A, 30 V. RDS(ON) = 12 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 14.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optim

 9.5. Size:120K  fairchild semi
 fdd6688 fdd6688 fdu6688.pdf

June 2004 FDD6688/FDU6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 84 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge

 9.6. Size:118K  fairchild semi
 fdu6688.pdf

June 2004 FDD6688/FDU6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 84 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 6 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for Low gate charge