FDU6676AS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDU6676AS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 710 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm
Paquete / Cubierta: TO-251AA
Búsqueda de reemplazo de FDU6676AS MOSFET
FDU6676AS Datasheet (PDF)
fdu6676as.pdf

April 2008tmFDU6676AS N-Channel PowerTrench SyncFET 30V, 90A, 5.8m General Description Features The FDU6676AS is designed to replace a single RDS(ON) = 5.8m Max, VGS = 10V MOSFET and Schottky diode in synchronous DC/DC RDS(ON) = 7.3m Max, VGS = 4.5V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
fdd6612a fdu6612a.pdf

February 2004FDD6612A/FDU6612A30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 30 A, 30 V RDS(ON) = 20 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 28 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate
fdu6612a.pdf

February 2004FDD6612A/FDU6612A30V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 30 A, 30 V RDS(ON) = 20 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DC RDS(ON) = 28 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate
fdd6644 fdu6644.pdf

April 2001 FDD6644/FDU6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 67 A, 30 V. RDS(ON) = 8.5 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 10.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been opt
Otros transistores... FDU068AN03L , FDU2572 , FDU3580 , FDU3706 , FDU6030BL , FDU6296 , FDU6512A , FDU6612A , 8205A , FDU6680 , FDU6688 , FDU6N50F , FDU6N50TU , FDU7030BL , FDU8580 , FDU8586 , FDU8770 .
History: PA110BC | MDD4N20YRH | IRFS742 | CJPF05N65
History: PA110BC | MDD4N20YRH | IRFS742 | CJPF05N65



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