FDW256P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDW256P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 599 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm

Encapsulados: TSSOP-8

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FDW256P datasheet

 ..1. Size:194K  fairchild semi
 fdw256p.pdf pdf_icon

FDW256P

July 2008 FDW256P 30V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 8 A, 30 V R = 13.5 m @ V = 10 V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 20 m @ V = 4.5 V DS(ON) GS process. It has been optimized for power management applications requiring a wide range of gave dri

 9.1. Size:209K  fairchild semi
 fdw254pz.pdf pdf_icon

FDW256P

July 2008 FDW254PZ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9.2 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 15 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 21.5 m @ VGS = 1.8 V

 9.2. Size:159K  fairchild semi
 fdw254p.pdf pdf_icon

FDW256P

June 2008 FDW254P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9.2 A, 20 V. RDS(ON) = 12 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 15 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 21.5 m @ VGS = 1.8

 9.3. Size:307K  fairchild semi
 fdw258p.pdf pdf_icon

FDW256P

July 2008 FDW258P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 9 A, 12 V. RDS(ON) = 11 m @ VGS = 4.5 V gate version of Fairchild Semiconductor s advanced RDS(ON) = 14 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 20 m @ V

MOSTRAR MÁS

Otros transistores... FDV302PD87Z, FDV302PNB8V001, FDV303NNB9U008, FDV304PD87Z, FDV304PNB8U003, FDW252P, FDW254P, FDW254PZ, IRF2807, FDW258P, FDW262P, FDW264P, FDW6923, FDZ201N, FDZ202P, FDZ204P, FDZ206P