FDZ294N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDZ294N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 172 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.023 Ohm
   Paquete / Cubierta: BGA

Búsqueda de reemplazo de MOSFET FDZ294N

FDZ294N Datasheet (PDF)

..1. Size:145K fairchild semi
fdz294n.pdf

July 2005 FDZ294N N-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 6 A, 20 V RDS(ON) = 23 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 34 m @ VGS = 2.5 V packaging, the FDZ294N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a Occupies only 2

9.1. Size:208K fairchild semi
fdz299p.pdf

February 2006 FDZ299P P-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 4.6 A, 20 V RDS(ON) = 55 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 80 m @ VGS = 2.5 V packaging, the FDZ299P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a

9.2. Size:241K fairchild semi
fdz291p.pdf

February 2006 FDZ291P P-Channel 1.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 1.5V specified 4.6 A, 20 V RDS(ON) = 40 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 60 m @ VGS = 2.5 Vpackaging, the FDZ291P minimizes both PCB space RDS(ON) = 160 m @ VGS = 1.5 V and

9.3. Size:240K fairchild semi
fdz293p.pdf

Feb 2006 FDZ293P P-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 4.6 A, 20 V rDS(on) = 46 m @ VGS = 4.5 V PowerTrench process with state of the art BGA rDS(on) = 72 m @ VGS = 2.5 V packaging, the FDZ293P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a

9.4. Size:136K fairchild semi
fdz298n.pdf

May 2005 FDZ298N N-Channel 2.5 V Specified PowerTrench BGA MOSFET General Description Features Combining Fairchilds advanced 2.5V specified 6 A, 20 V RDS(ON) = 27 m @ VGS = 4.5 V PowerTrench process with state of the art BGA RDS(ON) = 39 m @ VGS = 2.5 V packaging, the FDZ298N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a Occupies only 2.

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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