ZVN0124ASTOA Todos los transistores

 

ZVN0124ASTOA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZVN0124ASTOA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 240 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 16 Ohm
   Paquete / Cubierta: TO-92

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ZVN0124ASTOA Datasheet (PDF)

 ..1. Size:39K  zetex
zvn0124astoa zvn0124astob zvn0124astz.pdf

ZVN0124ASTOA
ZVN0124ASTOA

N-CHANNEL ENHANCEMENT4A ZVN0124AMODE VERTICAL DMOS FETISSUE 1 MARCH 94FEATURES* 240 Volt VDS* RDS(on)=16GS=10V7V5VAPPLICATIONS4VD* Telephone handsets G SE-Line3VTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT2VDrain-Source Voltage VDS 240 V8 10Continuous Drain Current at Tamb=25C ID 160 mAPulsed Drain Current IDM 2A

 6.1. Size:53K  diodes
zvn0124a.pdf

ZVN0124ASTOA
ZVN0124ASTOA

N-CHANNEL ENHANCEMENT4A ZVN0124AMODE VERTICAL DMOS FETISSUE 1 MARCH 94FEATURES* 240 Volt VDS* RDS(on)=16GS=10V7V5VAPPLICATIONS4VD* Telephone handsets G SE-Line3VTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT2VDrain-Source Voltage VDS 240 V8 10Continuous Drain Current at Tamb=25C ID 160 mAPulsed Drain Current IDM 2A

 8.1. Size:22K  diodes
zvn0120a.pdf

ZVN0124ASTOA

N-CHANNEL ENHANCEMENTZVN0120AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 200 Volt VDS* RDS(on)=16APPLICATIONSD* Telephone handsets G SE-LineREFER TO ZVN0124A FOR GRAPHSTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 200 VContinuous Drain Current at Tamb=25C ID 160 mAPulsed Drain Current IDM 2AGate S

 9.1. Size:51K  njs
zvn0106a.pdf

ZVN0124ASTOA

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