IRFP90N20DPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD - 95664 SMPS MOSFET IRFP90N20DPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.023 94Ao l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current TO-24

PD - 94301A SMPS MOSFET IRFP90N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.023 94A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current TO-247AC Absolute Maxim

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP90N20D IIRFP90N20D FEATURES Static drain-source on-resistance RDS(on) 23m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency DC-DC Converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

PD - 95057 IRFP9240PbF Lead-Free 2/26/04 Document Number 91239 www.vishay.com 1 IRFP9240PbF Document Number 91239 www.vishay.com 2 IRFP9240PbF Document Number 91239 www.vishay.com 3 IRFP9240PbF Document Number 91239 www.vishay.com 4 IRFP9240PbF Document Number 91239 www.vishay.com 5 IRFP9240PbF Document Number 91239 www.vishay.com 6 IRFP9240PbF TO-247AC Pac

PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175 C Operating Temperature P-Channel RDS(on) = 0.117 Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc

PD - 95057 IRFP9240PbF Lead-Free www.irf.com 1 2/26/04 IRFP9240PbF 2 www.irf.com IRFP9240PbF www.irf.com 3 IRFP9240PbF 4 www.irf.com IRFP9240PbF www.irf.com 5 IRFP9240PbF 6 www.irf.com IRFP9240PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D

PD - 95665 IRFP9140NPbF HEXFET Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175 C Operating Temperature VDSS = -100V l P-Channel l Fast Switching RDS(on) = 0.117 l Fully Avalanche Rated G l Lead-Free ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

PD-95991 IRFP9140PbF Lead-Free 12/22/04 Document Number 91238 www.vishay.com 1 IRFP9140PbF Document Number 91238 www.vishay.com 2 IRFP9140PbF Document Number 91238 www.vishay.com 3 IRFP9140PbF Document Number 91238 www.vishay.com 4 IRFP9140PbF Document Number 91238 www.vishay.com 5 IRFP9140PbF Document Number 91238 www.vishay.com 6 IRFP9140PbF Peak Diode Re

IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.20 RoHS P-Channel COMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting Hole Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Fast Switching Configuration Single Ease of Paralleli

IRFP9240, SiHFP9240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 V Available Repetitive Avalanche Rated RDS(on) (Max.) ( )VGS = - 10 V 0.50 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 44 Isolated Central Mounting Hole Qgs (nC) 7.1 Fast Switching Qgd (nC) 27 Ease of Paralleling Configuration Single Simple

IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 0.20 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting Hole Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Fast Switching Configuration Single Ease of

IRFP9150 Data Sheet August 1999 File Number 2293.4 25A, 100V, 0.150 Ohm, P-Channel Power Features MOSFET 25A, 100V This advanced power MOSFET is designed, tested, and rDS(ON) = 0.150 guaranteed to withstand a specified level of energy in the Single Pulse Avalanche Energy Rated breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power f

Description IRFP9240, the silicon P-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit VDS -200 V ID -11 A RDS(ON).Typ 0.34 F

isc P-Channel MOSFET Transistor IRFP9140N IIRFP9140N FEATURES Static drain-source on-resistance RDS(on) 0.117 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and