IRFP90N20DPBF Todos los transistores

 

IRFP90N20DPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP90N20DPBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 580 W

Tensión drenaje-fuente (Vds): 200 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 94 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 270 nC

Tiempo de elevación (tr): 160 nS

Conductancia de drenaje-sustrato (Cd): 1070 pF

Resistencia drenaje-fuente RDS(on): 0.023 Ohm

Empaquetado / Estuche: TO-247AC

Búsqueda de reemplazo de MOSFET IRFP90N20DPBF

 

IRFP90N20DPBF Datasheet (PDF)

1.1. irfp90n20dpbf.pdf Size:172K _upd-mosfet

IRFP90N20DPBF
IRFP90N20DPBF

PD - 95664 SMPS MOSFET IRFP90N20DPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 200V 0.023Ω 94Ao l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current TO-24

1.2. irfp90n20d.pdf Size:89K _international_rectifier

IRFP90N20DPBF
IRFP90N20DPBF

PD - 94301A SMPS MOSFET IRFP90N20D HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.023? 94A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current TO-247AC Absolute Maximum Rat

 5.1. irfp9140pbf.pdf Size:1478K _upd-mosfet

IRFP90N20DPBF
IRFP90N20DPBF

IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 100 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = - 10 V 0.20 RoHS* • P-Channel COMPLIANT Qg (Max.) (nC) 61 • Isolated Central Mounting Hole Qgs (nC) 14 • 175 °C Operating Temperature Qgd (nC) 29 • Fast Switching Configuration Single • Ease of

5.2. irfp9140npbf.pdf Size:236K _upd-mosfet

IRFP90N20DPBF
IRFP90N20DPBF

PD - 95665 IRFP9140NPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = -100V l P-Channel l Fast Switching RDS(on) = 0.117Ω l Fully Avalanche Rated G l Lead-Free ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

 5.3. irfp9240pbf.pdf Size:756K _upd-mosfet

IRFP90N20DPBF
IRFP90N20DPBF

PD - 95057 IRFP9240PbF • Lead-Free www.irf.com 1 2/26/04 IRFP9240PbF 2 www.irf.com IRFP9240PbF www.irf.com 3 IRFP9240PbF 4 www.irf.com IRFP9240PbF www.irf.com 5 IRFP9240PbF 6 www.irf.com IRFP9240PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D

5.4. irfp9140.pdf Size:165K _international_rectifier

IRFP90N20DPBF
IRFP90N20DPBF

 5.5. irfp9140pbf.pdf Size:1757K _international_rectifier

IRFP90N20DPBF
IRFP90N20DPBF

PD-95991 IRFP9140PbF Lead-Free 12/22/04 Document Number: 91238 www.vishay.com 1 IRFP9140PbF Document Number: 91238 www.vishay.com 2 IRFP9140PbF Document Number: 91238 www.vishay.com 3 IRFP9140PbF Document Number: 91238 www.vishay.com 4 IRFP9140PbF Document Number: 91238 www.vishay.com 5 IRFP9140PbF Document Number: 91238 www.vishay.com 6 IRFP9140PbF Peak Diode Recover

5.6. irfp9240.pdf Size:785K _international_rectifier

IRFP90N20DPBF
IRFP90N20DPBF

PD - 95057 IRFP9240PbF Lead-Free 2/26/04 Document Number: 91239 www.vishay.com 1 IRFP9240PbF Document Number: 91239 www.vishay.com 2 IRFP9240PbF Document Number: 91239 www.vishay.com 3 IRFP9240PbF Document Number: 91239 www.vishay.com 4 IRFP9240PbF Document Number: 91239 www.vishay.com 5 IRFP9240PbF Document Number: 91239 www.vishay.com 6 IRFP9240PbF TO-247AC Package

5.7. irfp9140n.pdf Size:142K _international_rectifier

IRFP90N20DPBF
IRFP90N20DPBF

PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature P-Channel RDS(on) = 0.117? Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

5.8. irfp9140-43 irf9540-43.pdf Size:378K _samsung

IRFP90N20DPBF
IRFP90N20DPBF



5.9. irfp9130-33 irf9130-33 irf9530-33.pdf Size:520K _samsung

IRFP90N20DPBF
IRFP90N20DPBF



5.10. irfp9240-43 irf9240-43 irf9640-43.pdf Size:519K _samsung

IRFP90N20DPBF
IRFP90N20DPBF



5.11. irf9130-33 irfp9130-33 irf9530-33.pdf Size:520K _samsung

IRFP90N20DPBF
IRFP90N20DPBF



5.12. irfp9230-33 irf9230-33 irf9630-33.pdf Size:519K _samsung

IRFP90N20DPBF
IRFP90N20DPBF



5.13. irfp9240 sihfp9240.pdf Size:1769K _vishay

IRFP90N20DPBF
IRFP90N20DPBF

IRFP9240, SiHFP9240 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 200 V Available Repetitive Avalanche Rated RDS(on) (Max.) (?)VGS = - 10 V 0.50 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 44 Isolated Central Mounting Hole Qgs (nC) 7.1 Fast Switching Qgd (nC) 27 Ease of Paralleling Configuration Single Simple Drive Requirements

5.14. irfp9140 sihfp9140.pdf Size:1444K _vishay

IRFP90N20DPBF
IRFP90N20DPBF

IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.20 RoHS P-Channel COMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting Hole Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Fast Switching Configuration Single Ease of Paralleling S Lead (Pb)-

5.15. irfp9150.pdf Size:66K _intersil

IRFP90N20DPBF
IRFP90N20DPBF

IRFP9150 Data Sheet August 1999 File Number 2293.4 25A, 100V, 0.150 Ohm, P-Channel Power Features MOSFET • 25A, 100V This advanced power MOSFET is designed, tested, and • rDS(ON) = 0.150Ω guaranteed to withstand a specified level of energy in the • Single Pulse Avalanche Energy Rated breakdown avalanche mode of operation. It is a P-Channel enhancement mode silicon-gate power f

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 
Back to Top

 


IRFP90N20DPBF
  IRFP90N20DPBF
  IRFP90N20DPBF
  IRFP90N20DPBF
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |

 

 

 
Back to Top