IRFPC42 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFPC42
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: TO-247AC

Búsqueda de reemplazo de MOSFET IRFPC42

IRFPC42 Datasheet (PDF)

..1. Size:489K international rectifier
irfpc40 irfpc42.pdf

0.1. Size:62K inchange semiconductor
irfpc42r.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFPC42R FEATURES Drain Current ID= 5.9A@ TC=25 Drain Source Voltage- : VDSS= 600V(Min) Static Drain-Source On-Resistance : RDS(on) = 1.6(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

8.1. Size:2059K international rectifier
irfpc40pbf.pdf

PD - 94933IRFPC40PbF Lead-Free1/8/04Document Number: 91240 www.vishay.com1IRFPC40PbFDocument Number: 91240 www.vishay.com2IRFPC40PbFDocument Number: 91240 www.vishay.com3IRFPC40PbFDocument Number: 91240 www.vishay.com4IRFPC40PbFDocument Number: 91240 www.vishay.com5IRFPC40PbFDocument Number: 91240 www.vishay.com6IRFPC40PbFTO-247AC Package Out

8.2. Size:168K international rectifier
irfpc40.pdf

8.3. Size:214K international rectifier
irfpc48.pdf

8.4. Size:1471K vishay
irfpc40 sihfpc40.pdf

IRFPC40, SiHFPC40Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2 RoHS*COMPLIANT Isolated Central Mounting HoleQg (Max.) (nC) 60 Fast SwitchingQgs (nC) 8.3 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Lead (P

8.5. Size:1478K vishay
irfpc40pbf.pdf

8.6. Size:1494K infineon
irfpc40 sihfpc40.pdf

IRFPC40, SiHFPC40Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 600Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.2 RoHS* Isolated Central Mounting Hole COMPLIANTQg (Max.) (nC) 60 Fast SwitchingQgs (nC) 8.3 Ease of ParallelingQgd (nC) 30 Simple Drive RequirementsConfiguration Single Compliant

8.7. Size:62K inchange semiconductor
irfpc40r.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFPC40R FEATURES Drain Current ID= 6.8A@ TC=25 Drain Source Voltage- : VDSS= 600V(Min) Static Drain-Source On-Resistance : RDS(on) = 1.2(Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RAT

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