IRFR120 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PD- 95523AIRFR120PbFIRFU120PbF Lead-Free12/03/04Document Number: 91266 www.vishay.com1IRFR/U120PbFDocument Number: 91266 www.vishay.com2IRFR/U120PbFDocument Number: 91266 www.vishay.com3IRFR/U120PbFDocument Number: 91266 www.vishay.com4IRFR/U120PbFDocument Number: 91266 www.vishay.com5IRFR/U120PbFDocument Number: 91266 www.vishay.com6IRFR/U12

IRFR120, IRFU120, SiHFR120, SiHFU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.27 Repetitive Avalanche RatedQg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120)Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and ReelQ

IRFR120, IRFU120, SiHFR120, SiHFU120Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 100 Definition Dynamic dV/dt RatingRDS(on) ()VGS = 10 V 0.27 Repetitive Avalanche RatedQg (Max.) (nC) 16 Surface Mount (IRFR120, SiHFR120)Qgs (nC) 4.4 Straight Lead (IRFU120, SiHFU120) Available in Tape and ReelQ

PD - 91318BIRFR/U1205HEXFET Power MOSFET Ultra Low On-ResistanceD Surface Mount (IRFR1205)VDSS = 55V Straight Lead (IRFU1205) Fast SwitchingRDS(on) = 0.027 Fully Avalanche RatedGDescriptionID = 44A SFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. This

IRFR/U120AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.4 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAKA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.155 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximu

PD - 95600AIRFR/U1205PbF Lead-Freewww.irf.com 112/9/04IRFR/U1205PbF2 www.irf.comIRFR/U1205PbFwww.irf.com 3IRFR/U1205PbF4 www.irf.comIRFR/U1205PbFwww.irf.com 5IRFR/U1205PbF6 www.irf.comIRFR/U1205PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage InductanceCurrent Tr

PD - 96345AUIRFR120ZAUIRFU120ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesDV(BR)DSS100Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.150ml 175C Operating TemperatureGl Fast Switchingmax. 190ml Repetitive Avalanche Allowed up to TjmaxSID 8.7A l Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecificall

PD - 95067AIRFR/U120NPbF Lead-Freewww.irf.com 112/9/04IRFR/U120NPbF2 www.irf.comIRFR/U120NPbFwww.irf.com 3IRFR/U120NPbF4 www.irf.comIRFR/U120NPbFwww.irf.com 5IRFR/U120NPbF6 www.irf.comIRFR/U120NPbFwww.irf.com 7IRFR/U120NPbFD-Pak (TO-252AA) Package OutlineDimensions are shown in millimeters (inches)D-Pak (TO-252AA) Part Marking InformationEXAMP

PD - 95772BIRFR120ZPbFIRFU120ZPbFHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 100V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 190m Fast SwitchingG Repetitive Avalanche Allowed up to Tjmax Lead-FreeID = 8.7ASDescriptionThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low on-r

PD - 91365BIRFR/U120NHEXFET Power MOSFET Surface Mount (IRFR120N)D Straight Lead (IRFU120N)VDSS = 100V Advanced Process Technology Fast SwitchingRDS(on) = 0.21 Fully Avalanche RatedGDescriptionID = 9.4ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve thelowest possible on-resistance per silicon area. T

PD - 96345AUIRFR120ZAUIRFU120ZAUTOMOTIVE MOSFETHEXFET Power MOSFETFeaturesDV(BR)DSS100Vl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) typ.150ml 175C Operating TemperatureGl Fast Switchingmax. 190ml Repetitive Avalanche Allowed up to TjmaxSID 8.7A l Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecificall

IRFR/U120AAdvanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.4 A Improved Gate Charge Extended Safe Operating AreaD-PAK I-PAKA (Max.) @ VDS = 100V Lower Leakage Current : 10 Lower RDS(ON) : 0.155 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximu

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input CapacitanceID = 8.4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.) 2112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

IRFR1205Featuresl VDS (V) = 55V ID= 44A (VGS=10V)l27m (VGS = 10V)ll RDS(ON)DescriptionThe D-PAK is designed for surface mounting using vapor phase,infrared, or wave soldering technigues The straight lead version Dis for through- hole mounting applications. Power dissipation le-vels up to 1.5 watts are possible in typical surface mount appli-cations.Gl Ultra LowOn

IRFR120TRwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

IRFR120NTRPBFwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RAT

IRFR1205TRwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise no

isc N-Channel MOSFET Transistor IRFR1205, IIRFR1205FEATURESStatic drain-source on-resistance:RDS(on)27mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-

isc N-Channel MOSFET Transistor IRFR120Z, IIRFR120ZFEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat

isc N-Channel MOSFET Transistor IRFR120N, IIRFR120NFEATURESStatic drain-source on-resistance:RDS(on)210mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat