IRFPG20 Todos los transistores

PD - 9.543C IRFPG50 HEXFET Power MOSFET www.irf.com 1 10/29/97 IRFPG50 2 www.irf.com IRFPG50 www.irf.com 3 IRFPG50 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us 10 100us 1ms 1 10ms TC = 25 C TJ = 150 C Single Pulse 0.1 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4 www.irf.com D I , Drain Current (A

PD - 94898 IRFPG40PbF Lead-Free 12/18/03 Document Number 91253 www.vishay.com 1 IRFPG40PbF Document Number 91253 www.vishay.com 2 IRFPG40PbF Document Number 91253 www.vishay.com 3 IRFPG40PbF Document Number 91253 www.vishay.com 4 IRFPG40PbF Document Number 91253 www.vishay.com 5 IRFPG40PbF Document Number 91253 www.vishay.com 6 IRFPG40PbF TO-247AC Package O

PD - 94806 IRFPG50PbF HEXFET Power MOSFET Lead-Free www.irf.com 1 10/31/03 IRFPG50PbF 2 www.irf.com IRFPG50PbF www.irf.com 3 IRFPG50PbF 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us 10 100us 1ms 1 10ms TC = 25 C TJ = 150 C Single Pulse 0.1 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4 www.irf.com

PD- 95718 IRFPG30PbF Lead-Free 8/3/04 Document Number 91252 www.vishay.com 1 IRFPG30PbF Document Number 91252 www.vishay.com 2 IRFPG30PbF Document Number 91252 www.vishay.com 3 IRFPG30PbF Document Number 91252 www.vishay.com 4 IRFPG30PbF Document Number 91252 www.vishay.com 5 IRFPG30PbF Document Number 91252 www.vishay.com 6 IRFPG30PbF Peak Diode Recovery d

IRFPG50, SiHFPG50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 Isolated Central Mounting Hole Qg (Max.) (nC) 190 Fast Switching Qgs (nC) 23 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Compliant to RoHS Directive 2002/9

IRFPG30, SiHFPG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 5.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 80 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Complian

IRFPG30, SiHFPG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 5.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 80 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Complian

IRFPG40, SiHFPG40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.5 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 120 COMPLIANT Fast Switching Qgs (nC) 16 Qgd (nC) 65 Ease of Paralleling Configuration Single Simple Drive Requirements Complian

IRFPG40, SiHFPG40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.5 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 120 COMPLIANT Fast Switching Qgs (nC) 16 Qgd (nC) 65 Ease of Paralleling Configuration Single Simple Drive Requirements Complian

IRFPG30, SiHFPG30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 5.0 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 80 COMPLIANT Fast Switching Qgs (nC) 10 Ease of Paralleling Qgd (nC) 42 Simple Drive Requirements Configuration Single Complian

isc N-Channel MOSFET Transistor IRFPG40 DESCRIPTION Drain Current I = 4.3A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC Adapter, Battery Charge and SMPS ABSOLUTE MAXIMUM RATINGS(T =25 ) C SYMBOL VALUE UNIT ARAME