IRFPG52 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFPG52
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V
|Id|ⓘ - Corriente continua de drenaje: 5.5 A
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
Encapsulados: TO-247AC
Búsqueda de reemplazo de IRFPG52 MOSFET
- Selecciónⓘ de transistores por parámetros
IRFPG52 datasheet
irfpc32 irfpe20 irfpe22 irfpe32 irfpe42 irfpe52 irfpf20 irfpf22 irfpf32 irfpf42 irfpf52 irfpg20 irfpg22 irfpg32 irfpg42 irfpg52.pdf
irfpg50.pdf
PD - 9.543C IRFPG50 HEXFET Power MOSFET www.irf.com 1 10/29/97 IRFPG50 2 www.irf.com IRFPG50 www.irf.com 3 IRFPG50 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us 10 100us 1ms 1 10ms TC = 25 C TJ = 150 C Single Pulse 0.1 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4 www.irf.com D I , Drain Current (A
irfpg50pbf.pdf
PD - 94806 IRFPG50PbF HEXFET Power MOSFET Lead-Free www.irf.com 1 10/31/03 IRFPG50PbF 2 www.irf.com IRFPG50PbF www.irf.com 3 IRFPG50PbF 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10us 10 100us 1ms 1 10ms TC = 25 C TJ = 150 C Single Pulse 0.1 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 4 www.irf.com
irfpg50 sihfpg50.pdf
IRFPG50, SiHFPG50 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 1000 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 2.0 Isolated Central Mounting Hole Qg (Max.) (nC) 190 Fast Switching Qgs (nC) 23 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements Compliant to RoHS Directive 2002/9
Otros transistores... IRFPF52, IRFPG20, IRFPG22, IRFPG30PBF, IRFPG32, IRFPG40PBF, IRFPG42, IRFPG50PBF, SKD502T, IRFPS29N60LPBF, IRFPS30N60KPBF, IRFPS35N50LPBF, IRFPS37N50APBF, IRFPS3810PBF, IRFPS3815PBF, IRFPS38N60L, IRFPS38N60LPBF
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