IRFPG52 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFPG52
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1000 V
|Id|ⓘ - Corriente continua de drenaje: 5.5 A
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
Paquete / Cubierta: TO-247AC
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IRFPG52 Datasheet (PDF)
irfpc32 irfpe20 irfpe22 irfpe32 irfpe42 irfpe52 irfpf20 irfpf22 irfpf32 irfpf42 irfpf52 irfpg20 irfpg22 irfpg32 irfpg42 irfpg52.pdf

irfpg50.pdf

PD - 9.543CIRFPG50HEXFET Power MOSFETwww.irf.com 110/29/97IRFPG502 www.irf.comIRFPG50www.irf.com 3IRFPG50 100OPERATION IN THIS AREA LIMITEDBY RDS(on)10us 10100us1ms 110ms TC = 25 C TJ = 150 C Single Pulse0.1 10 100 1000 10000VDS , Drain-to-Source Voltage (V)Fig 8. Maximum Safe OperatingArea4 www.irf.comDI, Drain Current (A
irfpg50pbf.pdf

PD - 94806IRFPG50PbFHEXFET Power MOSFET Lead-Freewww.irf.com 110/31/03IRFPG50PbF2 www.irf.comIRFPG50PbFwww.irf.com 3IRFPG50PbF 100OPERATION IN THIS AREA LIMITEDBY RDS(on)10us 10100us1ms 110ms TC = 25 C TJ = 150 C Single Pulse0.1 10 100 1000 10000VDS , Drain-to-Source Voltage (V)Fig 8. Maximum Safe OperatingArea4 www.irf.com
irfpg50 sihfpg50.pdf

IRFPG50, SiHFPG50Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 1000 Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 2.0 Isolated Central Mounting HoleQg (Max.) (nC) 190 Fast SwitchingQgs (nC) 23Qgd (nC) 110 Ease of ParallelingConfiguration Single Simple Drive Requirements Compliant to RoHS Directive 2002/9
Otros transistores... IRFPF52 , IRFPG20 , IRFPG22 , IRFPG30PBF , IRFPG32 , IRFPG40PBF , IRFPG42 , IRFPG50PBF , IRF9540N , IRFPS29N60LPBF , IRFPS30N60KPBF , IRFPS35N50LPBF , IRFPS37N50APBF , IRFPS3810PBF , IRFPS3815PBF , IRFPS38N60L , IRFPS38N60LPBF .



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