IRFPS40N60K Todos los transistores

 

IRFPS40N60K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFPS40N60K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 570 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 40 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 330 nC

Tiempo de elevación (tr): 110 nS

Conductancia de drenaje-sustrato (Cd): 750 pF

Resistencia drenaje-fuente RDS(on): 0.13 Ohm

Empaquetado / Estuche: TO-274AA

Búsqueda de reemplazo de MOSFET IRFPS40N60K

 

IRFPS40N60K Datasheet (PDF)

1.1. irfps40n60k irfps40n60kpbf.pdf Size:180K _upd-mosfet

IRFPS40N60K
IRFPS40N60K

IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ()VGS = 10 V 0.110 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 330 Ruggedness Qgs (nC) 84 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 150 and Current

1.2. irfps40n60kpbf.pdf Size:196K _international_rectifier

IRFPS40N60K
IRFPS40N60K

PD - 95702 SMPS MOSFET IRFPS40N60KPbF HEXFET Power MOSFET Applications l Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) 600V 0.110 ? 40A l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Rug

 1.3. irfps40n60k.pdf Size:107K _international_rectifier

IRFPS40N60K
IRFPS40N60K

PD - 94384 SMPS MOSFET IRFPS40N60K HEXFET Power MOSFET Applications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) 600V 0.110 ? 40A Uninterruptible Power Supply High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness SUPER TO-247AC

1.4. irfps40n60k sihfps40n60k.pdf Size:178K _vishay

IRFPS40N60K
IRFPS40N60K

IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) (?)VGS = 10 V 0.110 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 330 Ruggedness Qgs (nC) 84 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 150 and Current Configura

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 

 
Back to Top

 


IRFPS40N60K
  IRFPS40N60K
  IRFPS40N60K
  IRFPS40N60K
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SW1N55D | SKI10297 | SKI10195 | SKI10123 | SKI07171 | SKI07114 | SKI07074 | SKI06106 | SKI06073 | SKI06048 | SKI04044 | SKI04033 | SKI04024 | SKI03087 | SKI03063 |

 

 

 
Back to Top