IRFPS40N60K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFPS40N60K  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 570 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 110 nS

Cossⓘ - Capacitancia de salida: 750 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm

Encapsulados: TO-274AA

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IRFPS40N60K datasheet

 ..1. Size:196K  international rectifier
irfps40n60kpbf.pdf pdf_icon

IRFPS40N60K

PD - 95702 SMPS MOSFET IRFPS40N60KPbF HEXFET Power MOSFET Applications l Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) 600V 0.110 40A l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/

 ..2. Size:107K  international rectifier
irfps40n60k.pdf pdf_icon

IRFPS40N60K

PD - 94384 SMPS MOSFET IRFPS40N60K HEXFET Power MOSFET Applications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) 600V 0.110 40A Uninterruptible Power Supply High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness SUPER TO-

 ..3. Size:178K  vishay
irfps40n60k sihfps40n60k.pdf pdf_icon

IRFPS40N60K

IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.110 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 330 Ruggedness Qgs (nC) 84 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 150 and Current

 ..4. Size:180K  vishay
irfps40n60k irfps40n60kpbf sihfps40n60k.pdf pdf_icon

IRFPS40N60K

IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.110 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 330 Ruggedness Qgs (nC) 84 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 150 and Current

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