IRFPS43N50K Todos los transistores

 

IRFPS43N50K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFPS43N50K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 540 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 47 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 960 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: TO-274AA
     - Selección de transistores por parámetros

 

IRFPS43N50K Datasheet (PDF)

 ..1. Size:130K  international rectifier
irfps43n50kpbf.pdf pdf_icon

IRFPS43N50K

PD- 95898IRFPS43N50KPbFSMPS MOSFETHEXFET Power MOSFETApplicationsl Switch Mode Power Supply (SMPS)VDSS RDS(on) typ. IDl Uninterruptible Power Supplyl High Speed Power Switching 500V 0.078 47Al Hard Switched and High FrequencyCircuitsl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednes

 ..2. Size:99K  international rectifier
irfps43n50k.pdf pdf_icon

IRFPS43N50K

PD- 93922BSMPS MOSFETIRFPS43N50KHEXFET Power MOSFETApplicationsVDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.078 47A High Speed Power Switching Hard Switched and High FrequencyCircuitsBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characteriz

 ..3. Size:171K  vishay
irfps43n50k irfps43n50kpbf sihfps43n50k.pdf pdf_icon

IRFPS43N50K

IRFPS43N50K, SiHFPS43N50KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.078 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 350COMPLIANTRuggednessQgs (nC) 85 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 180and Current

 ..4. Size:170K  vishay
irfps43n50k sihfps43n50k.pdf pdf_icon

IRFPS43N50K

IRFPS43N50K, SiHFPS43N50KVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.078 Improved Gate, Avalanche and Dynamic dV/dt RoHS*Qg (Max.) (nC) 350COMPLIANTRuggednessQgs (nC) 85 Fully Characterized Capacitance and Avalanche VoltageQgd (nC) 180and Current

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ME2306BS-G | NVD14N03R

 

 
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