IRFPS43N50KPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFPS43N50KPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 540
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 500
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30
V
|Id|ⓘ - Corriente continua de drenaje: 47
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140
nS
Cossⓘ - Capacitancia
de salida: 960
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09
Ohm
Paquete / Cubierta: TO-274AA
Búsqueda de reemplazo de IRFPS43N50KPBF MOSFET
-
Selección ⓘ de transistores por parámetros
Principales características: IRFPS43N50KPBF
..1. Size:130K international rectifier
irfps43n50kpbf.pdf 
PD- 95898 IRFPS43N50KPbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) typ. ID l Uninterruptible Power Supply l High Speed Power Switching 500V 0.078 47A l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggednes
..2. Size:171K vishay
irfps43n50k irfps43n50kpbf sihfps43n50k.pdf 
IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.078 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 350 COMPLIANT Ruggedness Qgs (nC) 85 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 180 and Current
3.1. Size:99K international rectifier
irfps43n50k.pdf 
PD- 93922B SMPS MOSFET IRFPS43N50K HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.078 47A High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characteriz
3.2. Size:170K vishay
irfps43n50k sihfps43n50k.pdf 
IRFPS43N50K, SiHFPS43N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.078 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 350 COMPLIANT Ruggedness Qgs (nC) 85 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 180 and Current
8.1. Size:196K international rectifier
irfps40n60kpbf.pdf 
PD - 95702 SMPS MOSFET IRFPS40N60KPbF HEXFET Power MOSFET Applications l Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID l Switch Mode Power Supply (SMPS) 600V 0.110 40A l Uninterruptible Power Supply l High Speed Power Switching l Motor Drive l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/
8.2. Size:107K international rectifier
irfps40n60k.pdf 
PD - 94384 SMPS MOSFET IRFPS40N60K HEXFET Power MOSFET Applications Hard Switching Primary or PFC Switch VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) 600V 0.110 40A Uninterruptible Power Supply High Speed Power Switching Motor Drive Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness SUPER TO-
8.3. Size:173K international rectifier
irfps40n50lpbf.pdf 
PD- 95141 IRFPS40N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies 500V 170ns 46A 0.087 Uninterruptible Power Supplies Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications
8.4. Size:111K international rectifier
irfps40n50l.pdf 
PD- 93923B SMPS MOSFET IRFPS40N50L Applications HEXFET Power MOSFET Switch Mode Power Supply (SMPS) UninterruptIble Power Supply VDSS RDS(on) typ. ID High Speed Power Switching 500V 0.087 46A ZVS and High Frequency Circuit PWM Inverters Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Character
8.5. Size:187K vishay
irfps40n50l irfps40n50lpbf sihfps40n50l.pdf 
IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.087 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 380 COMPLIANT Requirements Qgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness
8.6. Size:178K vishay
irfps40n60k sihfps40n60k.pdf 
IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.110 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 330 Ruggedness Qgs (nC) 84 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 150 and Current
8.7. Size:185K vishay
irfps40n50l sihfps40n50l.pdf 
IRFPS40N50L, SiHFPS40N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 500 External Diodes in ZVS Applications Available RDS(on) ( )VGS = 10 V 0.087 RoHS* Lower Gate Charge Results in Simpler Drive Qg (Max.) (nC) 380 COMPLIANT Requirements Qgs (nC) 80 Enhanced dV/dt Capabilities Offer Improved Ruggedness
8.8. Size:150K vishay
irfps40n50lpbf.pdf 
"IRFPS40N50LPBF" PD- 95141 IRFPS40N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies 500V 170ns 46A 0.087 Uninterruptible Power Supplies Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for ext
8.9. Size:180K vishay
irfps40n60k irfps40n60kpbf sihfps40n60k.pdf 
IRFPS40N60K, SiHFPS40N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 600 Available Requirement RDS(on) ( )VGS = 10 V 0.110 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 330 Ruggedness Qgs (nC) 84 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 150 and Current
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