ZVN2106B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZVN2106B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.4 Vtrⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 45 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm
Paquete / Cubierta: TO-39
Búsqueda de reemplazo de MOSFET ZVN2106B
ZVN2106B Datasheet (PDF)
zvn2106b.pdf
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ZVN2106B MECHANICAL DATA NCHANNEL Dimensions in mm (inches) 8.51 (0.34)9.40 (0.37)ENHANCEMENT MODE 7.75 (0.305) 8.51 (0.335)MOSFET 6.10 (0.240)6.60 (0.260)V 60VDSSI 1.2A0.89max.D(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)dia. R 2.0 DS(on)5.08 (0.200)typ.FEATURES Faster switching 2.54 Low Ciss 2 (0.100)1 3 In
zvn2106g.pdf
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SOT223 N-CHANNEL ENHANCEMENTZVN2106GMODE VERTICAL DMOS FETISSUE 3 NOVEMBER 1995FEATURES* 60 Volt VDSD* RDS(on)=2SCOMPLEMENTARY TYPE - ZVP2106GDPARTMARKING DETAIL - ZVN2106GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 V3.0Continuous Drain Current at Tamb=25C ID 710 mAPulsed Drain Current IDM 8AGate Source Voltage V
zvn2106astoa zvn2106astob zvn2106astz.pdf
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N-CHANNEL ENHANCEMENTZVN2106AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDS(on)=2D G SE-LineID=1ATO92 CompatibleABSOLUTE MAXIMUM RATINGS.0.5APARAMETER SYMBOL VALUE UNIT0.25ADrain-Source Voltage VDS 60 V8 10Continuous Drain Current at Tamb=25C ID 450 mAPulsed Drain Current IDM 8As Gate Source Voltage VGS 20 VPower Diss
zvn2106a.pdf
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N-CHANNEL ENHANCEMENTZVN2106AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 60 Volt VDS* RDS(on)=2D G SE-LineID=1ATO92 CompatibleABSOLUTE MAXIMUM RATINGS.0.5APARAMETER SYMBOL VALUE UNIT0.25ADrain-Source Voltage VDS 60 V8 10Continuous Drain Current at Tamb=25C ID 450 mAPulsed Drain Current IDM 8As Gate Source Voltage VGS 20 VPower Diss
zvn2106gta zvn2106gtc.pdf
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SOT223 N-CHANNEL ENHANCEMENTZVN2106GMODE VERTICAL DMOS FETISSUE 3 NOVEMBER 1995FEATURES* 60 Volt VDSD* RDS(on)=2SCOMPLEMENTARY TYPE - ZVP2106GDPARTMARKING DETAIL - ZVN2106GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 60 V3.0Continuous Drain Current at Tamb=25C ID 710 mAPulsed Drain Current IDM 8AGate Source Voltage V
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
![ZVN2106B](https://alltransistors.com/images/us.png)
![ZVN2106B](https://alltransistors.com/images/es.png)
![ZVN2106B](https://alltransistors.com/images/ru.png)
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100