ZVN4525ZTA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZVN4525ZTA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 40 V
|Id|ⓘ - Corriente continua de drenaje: 0.24 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1.7 nS
Cossⓘ - Capacitancia de salida: 11 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 8.5 Ohm
Encapsulados: SOT-89
Búsqueda de reemplazo de ZVN4525ZTA MOSFET
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ZVN4525ZTA datasheet
zvn4525zta.pdf
ZVN4525Z 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT89 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general
zvn4525z.pdf
ZVN4525Z 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT89 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general
zvn4525g.pdf
ZVN4525G 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT223 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general
zvn4525gta zvn4525gtc.pdf
ZVN4525G 250V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode N-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT223 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and general
Otros transistores... ZVN4424C , ZVN4424GTA , ZVN4424GTC , ZVN4424ZTA , ZVN4525E6TA , ZVN4525E6TC , ZVN4525GTA , ZVN4525GTC , SKD502T , ZVNL110ASTOA , ZVNL110ASTOB , ZVNL110ASTZ , ZVNL110GTA , ZVNL110GTC , ZVNL120ASTOA , ZVNL120ASTOB , ZVNL120ASTZ .
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