ZVNL110ASTZ Todos los transistores

 

ZVNL110ASTZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZVNL110ASTZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO-92
     - Selección de transistores por parámetros

 

ZVNL110ASTZ Datasheet (PDF)

 ..1. Size:20K  diodes
 zvnl110astoa zvnl110astob zvnl110astz.pdf pdf_icon

ZVNL110ASTZ

N-CHANNEL ENHANCEMENTZVNL110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)=3* Low threshold voltageD G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 6AGate Source Voltage VGS 20 VPower Dissipati

 6.1. Size:27K  diodes
 zvnl110a.pdf pdf_icon

ZVNL110ASTZ

N-CHANNEL ENHANCEMENTZVNL110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)=3* Low threshold voltageD G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 6AGate Source Voltage VGS 20 VPower Dissipati

 7.1. Size:20K  diodes
 zvnl110gta zvnl110gtc.pdf pdf_icon

ZVNL110ASTZ

SOT223 N-CHANNEL ENHANCEMENT MODEZVNL110GLOW THRESHOLD VERTICAL DMOS FETISSUE 2 - FEBRUARY 1996 FEATURESD* LOW RDS(ON) - 3PARTMARKING DETAIL - ZVNL110SDGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 600 mAPulsed Drain Current IDM 6AGate-Source Voltage VGS 20 VPower Dissipation a

 7.2. Size:25K  diodes
 zvnl110g.pdf pdf_icon

ZVNL110ASTZ

SOT223 N-CHANNEL ENHANCEMENT MODEZVNL110GLOW THRESHOLD VERTICAL DMOS FETISSUE 2 - FEBRUARY 1996 FEATURESD* LOW RDS(ON) - 3PARTMARKING DETAIL - ZVNL110SDGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 600 mAPulsed Drain Current IDM 6AGate-Source Voltage VGS 20 VPower Dissipation a

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SDF4N60 | KMB6D0DN30QB | TK14C65W | APT20M26WVR | SHD220301 | P2503NVG | 2SK443

 

 
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