ZVNL110ASTZ Todos los transistores

 

ZVNL110ASTZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZVNL110ASTZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: TO-92
 

 Búsqueda de reemplazo de ZVNL110ASTZ MOSFET

   - Selección ⓘ de transistores por parámetros

 

ZVNL110ASTZ Datasheet (PDF)

 ..1. Size:20K  diodes
 zvnl110astoa zvnl110astob zvnl110astz.pdf pdf_icon

ZVNL110ASTZ

N-CHANNEL ENHANCEMENTZVNL110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)=3* Low threshold voltageD G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 6AGate Source Voltage VGS 20 VPower Dissipati

 6.1. Size:27K  diodes
 zvnl110a.pdf pdf_icon

ZVNL110ASTZ

N-CHANNEL ENHANCEMENTZVNL110AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 100 Volt VDS* RDS(on)=3* Low threshold voltageD G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 320 mAPulsed Drain Current IDM 6AGate Source Voltage VGS 20 VPower Dissipati

 7.1. Size:20K  diodes
 zvnl110gta zvnl110gtc.pdf pdf_icon

ZVNL110ASTZ

SOT223 N-CHANNEL ENHANCEMENT MODEZVNL110GLOW THRESHOLD VERTICAL DMOS FETISSUE 2 - FEBRUARY 1996 FEATURESD* LOW RDS(ON) - 3PARTMARKING DETAIL - ZVNL110SDGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 600 mAPulsed Drain Current IDM 6AGate-Source Voltage VGS 20 VPower Dissipation a

 7.2. Size:25K  diodes
 zvnl110g.pdf pdf_icon

ZVNL110ASTZ

SOT223 N-CHANNEL ENHANCEMENT MODEZVNL110GLOW THRESHOLD VERTICAL DMOS FETISSUE 2 - FEBRUARY 1996 FEATURESD* LOW RDS(ON) - 3PARTMARKING DETAIL - ZVNL110SDGABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 100 VContinuous Drain Current at Tamb=25C ID 600 mAPulsed Drain Current IDM 6AGate-Source Voltage VGS 20 VPower Dissipation a

MOSTRAR MÁS

Otros transistores... ZVN4424ZTA , ZVN4525E6TA , ZVN4525E6TC , ZVN4525GTA , ZVN4525GTC , ZVN4525ZTA , ZVNL110ASTOA , ZVNL110ASTOB , RFP50N06 , ZVNL110GTA , ZVNL110GTC , ZVNL120ASTOA , ZVNL120ASTOB , ZVNL120ASTZ , ZVNL120C , ZVNL120GTA , ZVNL120GTC .

 

 
Back to Top

 


 
.