ZVP4424ASTZ Todos los transistores

 

ZVP4424ASTZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZVP4424ASTZ
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 240 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
   |Id|ⓘ - Corriente continua de drenaje: 0.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 18 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 9 Ohm
   Paquete / Cubierta: TO-92

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ZVP4424ASTZ Datasheet (PDF)

 ..1. Size:80K  diodes
zvp4424astoa zvp4424astob zvp4424astz.pdf

ZVP4424ASTZ
ZVP4424ASTZ

P-CHANNEL ENHANCEMENTZVP4424AMODE VERTICAL DMOS FETISSUE 2 SEPTEMBER 94 T V I VD D I I TI I i i DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI D i VD V ID V VV I T I V

 6.1. Size:113K  diodes
zvp4424a.pdf

ZVP4424ASTZ
ZVP4424ASTZ

P-CHANNEL ENHANCEMENTZVP4424AMODE VERTICAL DMOS FETISSUE 2 SEPTEMBER 94 T V I VD D I I TI I i i DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI D i VD V ID V VV I T I V

 7.1. Size:104K  diodes
zvp4424z.pdf

ZVP4424ASTZ
ZVP4424ASTZ

SOT89 P-CHANNEL ENHANCEMENTZVP4424ZMODE VERTICAL DMOS FETISSUE 1 - NOVEMBER 1998FEATURESD* 240 Volt VDS* RDS(on)= 8.8 typical at VGS=-3.5V* Low threshold and Fast switchingAPPLICATIONS* Electronic hook switchesS* Telecoms and Battery powered equipmentDCOMPLEMENTARY TYPE - ZVN4424Z GPARTMARKING DETAIL - 24PABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT

 7.2. Size:140K  diodes
zvp4424g.pdf

ZVP4424ASTZ
ZVP4424ASTZ

SOT223 P-CHANNEL ENHANCEMENTZVP4424GMODE VERTICAL DMOS FETISSUE 2 - OCTOBER 1995 T V I VD D 8 8 i I V VD I i i I TI S I i i D T I i G T T V T I D T I V ABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID 8 I D i ID V I V V Di i i T i T T T 8ZVP4424GELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise sta

 7.3. Size:101K  diodes
zvp4424zta.pdf

ZVP4424ASTZ
ZVP4424ASTZ

SOT89 P-CHANNEL ENHANCEMENTZVP4424ZMODE VERTICAL DMOS FETISSUE 1 - NOVEMBER 1998FEATURESD* 240 Volt VDS* RDS(on)= 8.8 typical at VGS=-3.5V* Low threshold and Fast switchingAPPLICATIONS* Electronic hook switchesS* Telecoms and Battery powered equipmentDCOMPLEMENTARY TYPE - ZVN4424Z GPARTMARKING DETAIL - 24PABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT

 7.4. Size:113K  diodes
zvp4424gta zvp4424gtc.pdf

ZVP4424ASTZ
ZVP4424ASTZ

SOT223 P-CHANNEL ENHANCEMENTZVP4424GMODE VERTICAL DMOS FETISSUE 2 - OCTOBER 1995 T V I VD D 8 8 i I V VD I i i I TI S I i i D T I i G T T V T I D T I V ABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID 8 I D i ID V I V V Di i i T i T T T 8ZVP4424GELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise sta

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History: ZVN4306A

 

 
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History: ZVN4306A

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