ZVP4424GTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZVP4424GTA
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 240 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 40 V
|Id|ⓘ - Corriente continua de drenaje: 0.48 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 18 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 9 Ohm
Paquete / Cubierta: SOT-223
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ZVP4424GTA Datasheet (PDF)
zvp4424gta zvp4424gtc.pdf
SOT223 P-CHANNEL ENHANCEMENTZVP4424GMODE VERTICAL DMOS FETISSUE 2 - OCTOBER 1995 T V I VD D 8 8 i I V VD I i i I TI S I i i D T I i G T T V T I D T I V ABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID 8 I D i ID V I V V Di i i T i T T T 8ZVP4424GELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise sta
zvp4424g.pdf
SOT223 P-CHANNEL ENHANCEMENTZVP4424GMODE VERTICAL DMOS FETISSUE 2 - OCTOBER 1995 T V I VD D 8 8 i I V VD I i i I TI S I i i D T I i G T T V T I D T I V ABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID 8 I D i ID V I V V Di i i T i T T T 8ZVP4424GELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise sta
zvp4424a.pdf
P-CHANNEL ENHANCEMENTZVP4424AMODE VERTICAL DMOS FETISSUE 2 SEPTEMBER 94 T V I VD D I I TI I i i DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI D i VD V ID V VV I T I V
zvp4424z.pdf
SOT89 P-CHANNEL ENHANCEMENTZVP4424ZMODE VERTICAL DMOS FETISSUE 1 - NOVEMBER 1998FEATURESD* 240 Volt VDS* RDS(on)= 8.8 typical at VGS=-3.5V* Low threshold and Fast switchingAPPLICATIONS* Electronic hook switchesS* Telecoms and Battery powered equipmentDCOMPLEMENTARY TYPE - ZVN4424Z GPARTMARKING DETAIL - 24PABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT
zvp4424zta.pdf
SOT89 P-CHANNEL ENHANCEMENTZVP4424ZMODE VERTICAL DMOS FETISSUE 1 - NOVEMBER 1998FEATURESD* 240 Volt VDS* RDS(on)= 8.8 typical at VGS=-3.5V* Low threshold and Fast switchingAPPLICATIONS* Electronic hook switchesS* Telecoms and Battery powered equipmentDCOMPLEMENTARY TYPE - ZVN4424Z GPARTMARKING DETAIL - 24PABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNIT
zvp4424astoa zvp4424astob zvp4424astz.pdf
P-CHANNEL ENHANCEMENTZVP4424AMODE VERTICAL DMOS FETISSUE 2 SEPTEMBER 94 T V I VD D I I TI I i i DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI D i VD V ID V VV I T I V
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918