ZVP4525E6TC Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZVP4525E6TC  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 40 V

|Id|ⓘ - Corriente continua de drenaje: 0.197 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.78 nS

Cossⓘ - Capacitancia de salida: 12.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 14 Ohm

Encapsulados: SOT23-6

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ZVP4525E6TC datasheet

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 zvp4525e6ta zvp4525e6tc.pdf pdf_icon

ZVP4525E6TC

ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT23-6 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and gener

 5.1. Size:411K  diodes
 zvp4525e6.pdf pdf_icon

ZVP4525E6TC

ZVP4525E6 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY ( DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high SOT23-6 impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a variety of Telecom and gener

 7.1. Size:323K  diodes
 zvp4525g.pdf pdf_icon

ZVP4525E6TC

ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a v

 7.2. Size:321K  diodes
 zvp4525gta zvp4525gtc.pdf pdf_icon

ZVP4525E6TC

ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a v

MOSTRAR MÁS

Otros transistores... ZVP4105ASTZ, ZVP4424ASTOA, ZVP4424ASTOB, ZVP4424ASTZ, ZVP4424GTA, ZVP4424GTC, ZVP4424ZTA, ZVP4525E6TA, AO4407A, ZVP4525GTA, ZVP4525GTC, ZVP4525ZTA, ZXM41N10FTA, ZXM41N10FTC, ZXM61N02FTA, ZXM61N02FTC, ZXM61N03FTA