ZVP4525ZTA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZVP4525ZTA  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 40 V

|Id|ⓘ - Corriente continua de drenaje: 0.205 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.78 nS

Cossⓘ - Capacitancia de salida: 12.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 14 Ohm

Encapsulados: SOT-89

  📄📄 Copiar 

 Búsqueda de reemplazo de ZVP4525ZTA MOSFET

- Selecciónⓘ de transistores por parámetros

 

ZVP4525ZTA datasheet

 ..1. Size:132K  diodes
 zvp4525zta.pdf pdf_icon

ZVP4525ZTA

ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced SOT89 secondary breakdown. Applications benefiting from this device inclu

 6.1. Size:137K  diodes
 zvp4525z.pdf pdf_icon

ZVP4525ZTA

ZVP4525Z 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14 ; ID=-205mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced SOT89 secondary breakdown. Applications benefiting from this device inclu

 7.1. Size:323K  diodes
 zvp4525g.pdf pdf_icon

ZVP4525ZTA

ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a v

 7.2. Size:321K  diodes
 zvp4525gta zvp4525gtc.pdf pdf_icon

ZVP4525ZTA

ZVP4525G 250V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-250V; RDS(ON)=14V; ID=-265mA DESCRIPTION This 250V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown. Applications benefiting from this device include a v

MOSTRAR MÁS

Otros transistores... ZVP4424ASTZ, ZVP4424GTA, ZVP4424GTC, ZVP4424ZTA, ZVP4525E6TA, ZVP4525E6TC, ZVP4525GTA, ZVP4525GTC, AO4468, ZXM41N10FTA, ZXM41N10FTC, ZXM61N02FTA, ZXM61N02FTC, ZXM61N03FTA, ZXM61N03FTC, ZXM61P02FTA, ZXM61P02FTC