ZXM61N02FTC Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXM61N02FTC  📄📄 

Código: N02

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.625 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 1.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 0.7 V

Qgⓘ - Carga de la puerta: 3.4 nC

trⓘ - Tiempo de subida: 4.2 nS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm

Encapsulados: SOT-23

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ZXM61N02FTC datasheet

 ..1. Size:210K  zetex
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ZXM61N02FTC

ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.18 ; I =1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res

 4.1. Size:151K  tysemi
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ZXM61N02FTC

Product specification 20V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N02F SUMMARY V =20V; R =0.18 ; I =1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from TY utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEAT

 4.2. Size:877K  cn vbsemi
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ZXM61N02FTC

ZXM61N02FTA www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/

 5.1. Size:212K  diodes
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ZXM61N02FTC

ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.18 ; I =1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res

MOSTRAR MÁS

Otros transistores... ZVP4525E6TA, ZVP4525E6TC, ZVP4525GTA, ZVP4525GTC, ZVP4525ZTA, ZXM41N10FTA, ZXM41N10FTC, ZXM61N02FTA, IRF740, ZXM61N03FTA, ZXM61N03FTC, ZXM61P02FTA, ZXM61P02FTC, ZXM61P03FTA, ZXM61P03FTC, ZXM62N02E6TA, ZXM62N03E6TA