ZXM61N02FTC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXM61N02FTC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 1.7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.2 nS
Cossⓘ - Capacitancia de salida: 50 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET ZXM61N02FTC
ZXM61N02FTC Datasheet (PDF)
zxm61n02ftc.pdf
ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.18 ; I =1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res
zxm61n02f zxm61n02fta.pdf
Product specification 20V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N02F SUMMARY V =20V; R =0.18 ; I =1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from TY utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEAT
zxm61n02fta.pdf
ZXM61N02FTA www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/
zxm61n02f.pdf
ZXM61N02F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.18 ; I =1.7A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res
Otros transistores... ZVP4525E6TA , ZVP4525E6TC , ZVP4525GTA , ZVP4525GTC , ZVP4525ZTA , ZXM41N10FTA , ZXM41N10FTC , ZXM61N02FTA , IRF740 , ZXM61N03FTA , ZXM61N03FTC , ZXM61P02FTA , ZXM61P02FTC , ZXM61P03FTA , ZXM61P03FTC , ZXM62N02E6TA , ZXM62N03E6TA .
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