ZXM61N02FTC Todos los transistores

 

ZXM61N02FTC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXM61N02FTC
   Código: N02
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.7 V
   Qgⓘ - Carga de la puerta: 3.4 nC
   trⓘ - Tiempo de subida: 4.2 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de MOSFET ZXM61N02FTC

 

ZXM61N02FTC Datasheet (PDF)

 ..1. Size:210K  zetex
zxm61n02ftc.pdf

ZXM61N02FTC
ZXM61N02FTC

ZXM61N02F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.18 ; I =1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res

 4.1. Size:151K  tysemi
zxm61n02f zxm61n02fta.pdf

ZXM61N02FTC
ZXM61N02FTC

Product specification20V N-CHANNEL ENHANCEMENT MODE MOSFETZXM61N02FSUMMARYV =20V; R =0.18 ; I =1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from TY utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEAT

 4.2. Size:877K  cn vbsemi
zxm61n02fta.pdf

ZXM61N02FTC
ZXM61N02FTC

ZXM61N02FTAwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/

 5.1. Size:212K  diodes
zxm61n02f.pdf

ZXM61N02FTC
ZXM61N02FTC

ZXM61N02F20V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =20V; R =0.18 ; I =1.7A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top

 


ZXM61N02FTC
  ZXM61N02FTC
  ZXM61N02FTC
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F

 

 

 
Back to Top