ZXM61N03FTA Todos los transistores

 

ZXM61N03FTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXM61N03FTA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.5 nS
   Cossⓘ - Capacitancia de salida: 35 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
   Paquete / Cubierta: SOT-23
 

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ZXM61N03FTA Datasheet (PDF)

 ..1. Size:187K  zetex
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ZXM61N03FTA

ZXM61N03F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.22 ; I =1.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res

 4.1. Size:187K  zetex
zxm61n03ftc.pdf pdf_icon

ZXM61N03FTA

ZXM61N03F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.22 ; I =1.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res

 5.1. Size:188K  diodes
zxm61n03f.pdf pdf_icon

ZXM61N03FTA

ZXM61N03F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.22 ; I =1.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res

 5.2. Size:116K  tysemi
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ZXM61N03FTA

Product specificationZXM61N03F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.22 ; I =1.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from TY utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEAT

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