ZXM61N03FTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXM61N03FTA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.625 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.5 nS
Cossⓘ - Capacitancia de salida: 35 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
Paquete / Cubierta: SOT-23
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ZXM61N03FTA Datasheet (PDF)
zxm61n03fta.pdf

ZXM61N03F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.22 ; I =1.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res
zxm61n03ftc.pdf

ZXM61N03F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.22 ; I =1.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res
zxm61n03f.pdf

ZXM61N03F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.22 ; I =1.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEATURES Low on-res
zxm61n03f.pdf

Product specificationZXM61N03F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV =30V; R =0.22 ; I =1.4A(BR)DSS DS(ON) DDESCRIPTIONThis new generation of high density MOSFETs from TY utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications.SOT23FEAT
Otros transistores... ZVP4525E6TC , ZVP4525GTA , ZVP4525GTC , ZVP4525ZTA , ZXM41N10FTA , ZXM41N10FTC , ZXM61N02FTA , ZXM61N02FTC , IRF840 , ZXM61N03FTC , ZXM61P02FTA , ZXM61P02FTC , ZXM61P03FTA , ZXM61P03FTC , ZXM62N02E6TA , ZXM62N03E6TA , ZXM62N03GTA .
History: SIHFU420
History: SIHFU420



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