ZXM61N03FTA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXM61N03FTA  📄📄 

Código: N03

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.625 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 1 V

Qgⓘ - Carga de la puerta: 4.1 nC

trⓘ - Tiempo de subida: 2.5 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm

Encapsulados: SOT-23

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ZXM61N03FTA datasheet

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ZXM61N03FTA

ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 ; I =1.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res

 4.1. Size:187K  zetex
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ZXM61N03FTA

ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 ; I =1.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res

 5.1. Size:188K  diodes
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ZXM61N03FTA

ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 ; I =1.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res

 5.2. Size:116K  tysemi
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ZXM61N03FTA

Product specification ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 ; I =1.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from TY utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEAT

MOSTRAR MÁS

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