ZXM61N03FTC Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXM61N03FTC 📄📄
Código: N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.625 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 1 V
Qgⓘ - Carga de la puerta: 4.1 nC
trⓘ - Tiempo de subida: 2.5 nS
Cossⓘ - Capacitancia de salida: 35 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.22 Ohm
Encapsulados: SOT-23
📄📄 Copiar
Búsqueda de reemplazo de ZXM61N03FTC MOSFET
- Selecciónⓘ de transistores por parámetros
ZXM61N03FTC datasheet
zxm61n03ftc.pdf
ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 ; I =1.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res
zxm61n03fta.pdf
ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 ; I =1.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res
zxm61n03f.pdf
ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 ; I =1.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES Low on-res
zxm61n03f.pdf
Product specification ZXM61N03F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =30V; R =0.22 ; I =1.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from TY utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEAT
Otros transistores... ZVP4525GTA, ZVP4525GTC, ZVP4525ZTA, ZXM41N10FTA, ZXM41N10FTC, ZXM61N02FTA, ZXM61N02FTC, ZXM61N03FTA, 20N60, ZXM61P02FTA, ZXM61P02FTC, ZXM61P03FTA, ZXM61P03FTC, ZXM62N02E6TA, ZXM62N03E6TA, ZXM62N03GTA, ZXM62P02E6TA
History: ZXM62P03E6TA | STB11N65M5
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BCD70N07A | BCD90N03 | BCD80N06 | T50N06 | H50N06 | BCD12N65 | BCT12N65 | BCD4N65 | BCT4N65 | BCD7N65 | BCT7N65 | BCT20N65 | ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q
Popular searches
d667 | a965 transistor | hy3210 | d313 transistor equivalent | 2sb827 | c5200 datasheet | 2n2614 | 2sa777 replacement
