ZXM64N02XTC Todos los transistores

 

ZXM64N02XTC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXM64N02XTC
   Código: ZXM64N02
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 0.7 V
   Qgⓘ - Carga de la puerta: 16 nC
   trⓘ - Tiempo de subida: 9.6 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm
   Paquete / Cubierta: MSOP8

 Búsqueda de reemplazo de MOSFET ZXM64N02XTC

 

ZXM64N02XTC Datasheet (PDF)

 ..1. Size:161K  zetex
 zxm64n02xtc.pdf pdf_icon

ZXM64N02XTC

ZXM64N02X 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.040 ; I =5.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-

 4.1. Size:161K  zetex
 zxm64n02xta.pdf pdf_icon

ZXM64N02XTC

ZXM64N02X 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.040 ; I =5.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-

 5.1. Size:338K  diodes
 zxm64n02x.pdf pdf_icon

ZXM64N02XTC

ZXM64N02X 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V =20V; R =0.040 ; I =5.4A (BR)DSS DS(ON) D DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-

 7.1. Size:65K  diodes
 zxm64n035l3.pdf pdf_icon

ZXM64N02XTC

ZXM64N035L3 35V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 35V RDS(on) = 0.060 ID = 13A DESCRIPTION This new generation of high cell density planar MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-r

MOSTRAR MÁS

Otros transistores... ZXM61P03FTC , ZXM62N02E6TA , ZXM62N03E6TA , ZXM62N03GTA , ZXM62P02E6TA , ZXM62P03E6TA , ZXM62P03GTA , ZXM64N02XTA , AO3400 , ZXM64N035GTA , ZXM64N03XTA , ZXM64N03XTC , ZXM64P02XTA , ZXM64P02XTC , ZXM64P035GTA , ZXM64P03XTA , ZXM66N02N8TA .

 

 
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