ZXM66P02N8TA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXM66P02N8TA
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.56 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 6.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 44.3 nS
Cossⓘ - Capacitancia de salida: 1038 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: SO-8
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ZXM66P02N8TA Datasheet (PDF)
zxm66p02n8tc zxm66p02n8 zxm66p02n8ta.pdf

A Product Line ofDiodes IncorporatedZXM66P02N820V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits High pulse current handling in linear mode V(BR)DSS RDS(on) ID Low on-resistance Fast switching speed -20V 0.025 -8.0A Low gate drive Low profile SOIC package Descripti
zxm66p03n8.pdf

ZXM66P03N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications. SO8FEATURES Low on-resistanc
zxm66p03n8ta.pdf

ZXM66P03N830V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=-30V; RDS(ON)=0.025 ; ID=-7.9ADESCRIPTIONThis new generation of high density MOSFETs from Zetex utilises a uniquestructure that combines the benefits of low on-resistance with fast switchingspeed. This makes them ideal for high efficiency, low voltage, powermanagement applications. SO8FEATURES Low on-resistanc
zxm66p03n8ta.pdf

ZXM66P03N8TAwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6
Otros transistores... ZXM64N03XTA , ZXM64N03XTC , ZXM64P02XTA , ZXM64P02XTC , ZXM64P035GTA , ZXM64P03XTA , ZXM66N02N8TA , ZXM66N03N8TA , AON7408 , ZXM66P02N8TC , ZXM66P03N8TA , ZXMD63C02X , ZXMN0545G4TA , ZXMN10A07FTA , ZXMN10A07FTC , ZXMN10A07ZTA , ZXMN10A08E6TA .
History: ZXM66P02N8TC
History: ZXM66P02N8TC



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