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PD-95013A IRFR320PbF IRFU320PbF Lead-Free 12/13/04 Document Number 91273 www.vishay.com 1 IRFR/U320PbF Document Number 91273 www.vishay.com 2 IRFR/U320PbF Document Number 91273 www.vishay.com 3 IRFR/U320PbF Document Number 91273 www.vishay.com 4 IRFR/U320PbF Document Number 91273 www.vishay.com 5 IRFR/U320PbF Document Number 91273 www.vishay.com 6 IRFR/U320

PD-95013A IRFR320PbF IRFU320PbF Lead-Free www.irf.com 1 12/13/04 IRFR/U320PbF 2 www.irf.com IRFR/U320PbF www.irf.com 3 IRFR/U320PbF 4 www.irf.com IRFR/U320PbF www.irf.com 5 IRFR/U320PbF 6 www.irf.com IRFR/U320PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current

IRFR320, IRFU320, SiHFR320, SiHFU320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 1.8 RoHS* Surface Mount (IRFR320/SiHFR320) Qg (Max.) (nC) 20 COMPLIANT Straight Lead (IRFU320/SiHFU320) Qgs (nC) 3.3 Available in Tape and Reel Qgd (nC) 11 Fast Switching

IRFR320, IRFU320, SiHFR320, SiHFU320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated Surface Mount (IRFR320,SiHFR320) RDS(on) ( )VGS = 10 V 1.8 Straight Lead (IRFU320,SiHFU320) Qg (Max.) (nC) 20 Available in Tape and Reel Qgs (nC) 3.3 Fast Switching Qgd (nC) 11 Ease of

iscN-Channel MOSFET Transistor IRFR320 FEATURES Low drain-source on-resistance RDS(ON) 1.8 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V (Typ.) Lower RDS(ON) 1.408 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

PD - 94373 IRFR3412 IRFU3412 SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) max ID l Motor Drive 100V 0.025 48A l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D-Pak

AUTOMOTIVE GRADE AUIRFR3607 AUIRFU3607 Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D 175 C Operating Temperature VDSS 75V Fast Switching RDS(on) typ. 7.34m Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant max. 9.0m Automotive Qualified * G ID (Silicon Limited) 80A S ID (Package Limited) 56A Description Specifically des

PD - 94452 IRFR3418 IRFU3418 HEXFET Power MOSFET Applications VDSS RDS(on) Max ID l High frequency DC-DC converters 80V 14m 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3418 IRFU3418 A

PD - 94505 IRFR3410 IRFU3410 HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 39m 31A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3410 IRFU

PD - 94272 IRFR3911 SMPS MOSFET IRFU3911 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.115 14A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3

PD - 95071A IRFR3708PbF SMPS MOSFET IRFU3708PbF HEXFET Power MOSFET Applications l High Frequency DC-DC Isolated Converters VDSS RDS(on) max ID with Synchronous Rectification for Telecom 30V 12.5m 61A and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS D-Pak I-P

PD - 95019A IRFR3707PbF SMPS MOSFET IRFRU3707PbF Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial use 30V 13m 61A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low RDS(on) l Very Low Gate Impedance l Fully Characterized Ava

PD - 94499A AUTOMOTIVE MOSFET IRFR3504 IRFU3504 Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175 C Operating Temperature VDSS = 40V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 9.2m G Description Specifically designed for Automotive applications, this HEXFET ID = 30A Power MOSFET utilizes the l

PD - 91364B IRFR/U3910 HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR3910) VDSS = 100V Straight Lead (IRFU3910) Advanced Process Technology RDS(on) = 0.115 Fast Switching G Fully Avalanche Rated ID = 16A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resi

PD - 94648 IRFR3707Z IRFU3707Z Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 9.5m 9.6nC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche

PD - 94651A IRFR_U3711Z IRFR_U3711Z Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC 20V 5.7m 18nC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avala

PD - 96046 IRFR3709ZCPbF IRFU3709ZCPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Char

PD - 97312B IRFR3607PbF IRFU3607PbF Applications l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching l Hard Switched and High Frequency Circuits RDS(on) typ. 7.34m max. 9.0m G ID (Silicon Limited) 80A Benefits l Improved Gate, Avalanche and Dynamic S ID (Package Limited) 56A dv

PD - 95074A IRFR3711ZPbF IRFU3711ZPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC 20V 5.7m 18nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak I

PD - 95371A IRFR3411PbF l Advanced Process Technology IRFU3411PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating l 175 C Operating Temperature D l Fast Switching VDSS = 100V l Fully Avalanche Rated l Lead-Free RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to

PD - 95070A IRFR3303PbF IRFU3303PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Surface Mount (IRFR3303) D l Straight Lead (IRFU3033) VDSS = 30V l Advanced Process Technology l Fast Switching RDS(on) = 0.031 l Fully Avalanche Rated G l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

PD - 95511B IRFR3505PbF IRFU3505PbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 55V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.013 G Lead-Free ID = 30A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resis

PD - 95072A IRFR3709ZPbF IRFU3709ZPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Qg Converters for Computer Processor Power l High Frequency Isolated DC-DC 30V 6.5m 17nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Chara

PD - 95079A IRFR3910PbF IRFU3910PbF Lead-Free www.irf.com 1 1/7/05 IRFR/U3910PbF 2 www.irf.com IRFR/U3910PbF www.irf.com 3 IRFR/U3910PbF 4 www.irf.com IRFR/U3910PbF www.irf.com 5 IRFR/U3910PbF 6 www.irf.com IRFR/U3910PbF www.irf.com 7 IRFR/U3910PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Informat

PD - 95070A IRFR3303PbF IRFU3303PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Surface Mount (IRFR3303) D l Straight Lead (IRFU3033) VDSS = 30V l Advanced Process Technology l Fast Switching RDS(on) = 0.031 l Fully Avalanche Rated G l Lead-Free S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extre

PD - 9.1642A IRFR/U3303 HEXFET Power MOSFET Ultra Low On-Resistance D Surface Mount (IRFR3303) VDSS = 30V Straight Lead (IRFU3033) Advanced Process Technology RDS(on) = 0.031 Fast Switching G Fully Avalanche Rated ID = 33A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistanc

PD - 97687A AUTOMOTIVE GRADE AUIRFR3504 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 40V l 175 C Operating Temperature RDS(on) typ. l Fast Switching 7.8m l Fully Avalanche Rated max 9.2m G l Repetitive Avalanche Allowed ID (Silicon Limited) 87A up to Tjmax S ID (Package Limited) l Lead-Free, RoHS Compliant 56A l Automotiv

PD - 95516A IRFR3418PbF IRFU3418PbF HEXFET Power MOSFET Applications VDSS RDS(on) Max ID l High frequency DC-DC converters l Lead-Free 14m 30A 80V Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current

PD - 95315B IRFR3504PbF IRFU3504PbF Features Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance 175 C Operating Temperature D Fast Switching VDSS = 40V Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.2m G Description This HEXFET Power MOSFET utilizes the latest processing ID = 30A techniques to achieve extremely low on-resistan

PD - 95513D IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m l Multiple Package Options G l Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest pro

PD - 95371B IRFR3411PbF l Advanced Process Technology IRFU3411PbF l Ultra Low On-Resistance HEXFET Power MOSFET l Dynamic dv/dt Rating l 175 C Operating Temperature D l Fast Switching VDSS = 100V l Fully Avalanche Rated l Lead-Free RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to

PD - 97451 AUTOMOTIVE GRADE AUIRFR3710Z HEXFET Power MOSFET Features D l Advanced Process Technology V(BR)DSS 100V l Ultra Low On-Resistance RDS(on) max. 18m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 56A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 42A l Lead-Free, RoHS Compliant l Automotive Qualified * Description

PD - 95028A IRFR310PbF IRFU310PbF Lead-Free 12/10/04 Document Number 91272 www.vishay.com 1 IRFR/U310PbF Document Number 91272 www.vishay.com 2 IRFR/U310PbF Document Number 91272 www.vishay.com 3 IRFR/U310PbF Document Number 91272 www.vishay.com 4 IRFR/U310PbF Document Number 91272 www.vishay.com 5 IRFR/U310PbF Document Number 91272 www.vishay.com 6 IRFR/U3

PD - 96045 IRFR3707ZCPbF IRFU3707ZCPbF Applications l High Frequency Synchronous Buck HEXFET Power MOSFET Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC Converters with Synchronous Rectification 30V 9.5m 9.6nC for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Char

PD - 94506A IRFR3505 AUTOMOTIVE MOSFET IRFU3505 HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 55V Ultra Low On-Resistance 175 C Operating Temperature RDS(on) = 0.013 Fast Switching G Repetitive Avalanche Allowed up to Tjmax ID = 30A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilize

PD - 95442A IRFR3704ZPbF IRFU3704ZPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck Converters for Computer Processor Power VDSS RDS(on) max Qg l High Frequency Isolated DC-DC Converters with Synchronous Rectification 20V 8.4m 9.3nC for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak

PD - 96065 IRFR3706CPbF SMPS MOSFET IRFU3706CPbF Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial Use 20V 9.0m 75A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS D-Pak

PD - 94523 IRFR3518 IRFU3518 HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max ID 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current IRFR3518 IRFU3518

PD - 93933B IRFR3706 SMPS MOSFET IRFU3706 HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High Frequency Isolated DC-DC 20V 9.0m 75A Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Characterized Avalan

PD - 95514A IRFR3410PbF IRFU3410PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 39m 31A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Cu

PD - 93934B IRFR3707 SMPS MOSFET IRFU3707 Applications HEXFET Power MOSFET High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial use 30V 13m 61A High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low RDS(on) Very Low Gate Impedance Fully Characterized Avalanche Voltage and Current

PD - 96050 IRFR3711ZCPbF IRFU3711ZCPbF Applications HEXFET Power MOSFET l High Frequency Synchronous Buck VDSS RDS(on) max Converters for Computer Processor Power Qg l High Frequency Isolated DC-DC 20V 5.7m 18nC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance D-Pak I-Pak l

PD - 95521B IRFR3504ZPbF IRFU3504ZPbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V 175 C Operating Temperature Fast Switching RDS(on) = 9.0m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

PD - 97492 AUIRFR3504Z AUTOMOTIVE GRADE HEXFET Power MOSFET Features Advanced Process Technology D V(BR)DSS 40V Low On-Resistance 175 C Operating Temperature RDS(on) max. 9.0m Fast Switching G ID (Silicon Limited) 77A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant ID (Package Limited) 42A S Automotive Qualified * Description D Specifical

PD - 94393 IRFR3411 IRFU3411 Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D VDSS = 100V 175 C Operating Temperature Fast Switching Fully Avalanche Rated RDS(on) = 44m G Description Advanced HEXFET Power MOSFETs from International ID = 32A S Rectifier utilize advanced processing techniques to achieve extremely low on-

PD - 93935B IRFR3708 SMPS MOSFET IRFU3708 HEXFET Power MOSFET Applications High Frequency DC-DC Isolated Converters VDSS RDS(on) max ID with Synchronous Rectification for Telecom 30V 12.5m 61A and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Vol

PD - 95521B IRFR3504ZPbF IRFU3504ZPbF HEXFET Power MOSFET Features Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V 175 C Operating Temperature Fast Switching RDS(on) = 9.0m Repetitive Avalanche Allowed up to Tjmax G Lead-Free ID = 42A S Description This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re

PD - 95513D IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF Features l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance D l 175 C Operating Temperature VDSS = 100V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 18m l Multiple Package Options G l Lead-Free ID = 42A Description S This HEXFET Power MOSFET utilizes the latest pro

PD - 95373A IRFR3911PbF SMPS MOSFET IRFU3911PbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 0.115 14A l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I

PD - 95498A IRFR3412PbF IRFU3412PbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) max ID l Motor Drive 100V 0.025 48A l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D-Pak I-Pak l Fully Cha

PD - 95034A IRFR3704PbF SMPS MOSFET IRFU3704PbF Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 9.5m 75A for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested l Lead-Free Benefits l Ultra-Low RDS(on) l Very Low Gate Impedance l Fully

PD- 95073A IRFR3711PbF SMPS MOSFET IRFU3711PbF Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial Use 20V 6.5m 110A l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Tu

PD - 93887D IRFR3704 SMPS MOSFET IRFU3704 Applications HEXFET Power MOSFET l High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 9.5m 75A for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l 100% RG Tested Benefits l Ultra-Low RDS(on) l Very Low Gate Impedance l Fully Characterized Aval

PD - 97313 IRFR3806PbF IRFU3806PbF Applications l High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET l Uninterruptible Power Supply l High Speed Power Switching D VDSS 60V l Hard Switched and High Frequency Circuits RDS(on) typ. 12.6m G max. 15.8m Benefits ID 43A S l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized C

PD - 95510A IRFR3518PbF IRFU3518PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max ID l Lead-Free 80V 29mW 30A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage D-Pak I-Pak and Current

PD - 97451 AUTOMOTIVE GRADE AUIRFR3710Z HEXFET Power MOSFET Features D l Advanced Process Technology V(BR)DSS 100V l Ultra Low On-Resistance RDS(on) max. 18m l 175 C Operating Temperature G l Fast Switching ID (Silicon Limited) 56A l Repetitive Avalanche Allowed up to Tjmax S ID (Package Limited) 42A l Lead-Free, RoHS Compliant l Automotive Qualified * Description

PD - 95097A IRFR3706PbF SMPS MOSFET IRFU3706PbF Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC Converters with Synchronous Rectification VDSS RDS(on) max ID for Telecom and Industrial Use 20V 9.0m 75A l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V VGS l Fully Ch

PD- 94061B IRFR3711 SMPS MOSFET IRFU3711 Applications HEXFET Power MOSFET l High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification for Telecom and Industrial Use 20V 6.5m 110A l High Frequency Buck Converters for Server Processor Power Synchronous FET l Optimized for Synchronous Buck Converters Including Capacitive Induced Turn-on

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Lower RDS(ON) 0.765 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Charac

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 3.6 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 2.815 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

IRFR310, IRFU310, SiHFR310, SiHFU310 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 Surface Mount (IRFR310, SiHFR310) Straight Lead (IRFU310, SiHFU310) Qg (Max.) (nC) 12 Available in Tape and Reel Qgs (nC) 1.9 Fast Switching Qgd (nC) 6.5 Ful

IRFR310, IRFU310, SiHFR310, SiHFU310 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 3.6 RoHS* Surface Mount (IRFR310/SiHFR310) Qg (Max.) (nC) 12 COMPLIANT Straight Lead (IRFU310/SiHFU310) Qgs (nC) 1.9 Available in Tape and Reel Qgd (nC) 6.5 Configuration S

IRFR3707ZPbF IRFU3707ZPbF HEXFET Power MOSFET Applications High Frequency Synchronous Buck VDSS 30V Converters for Computer Processor Power RDS(on) max 9.5m High Frequency Isolated DC-DC Converters with Synchronous Rectification Qg 9.6nC for Telecom and Industrial Use D D S S D G G I- Pak D- Pak Benefits IRFU3707ZPbF IRFR3707ZPbF

AUTOMOTIVE GRADE AUIRFR3806 Features HEXFET Power MOSFET Advanced Process Technology VDSS 60V Ultra Low On-Resistance RDS(on) typ. 12.6m Dynamic dV/dT Rating max. 15.8m 175 C Operating Temperature ID 43A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Desc

AUTOMOTIVE GRADE AUIRFR3504Z Features HEXFET Power MOSFET Advanced Process Technology Low On-Resistance VDSS 40V 175 C Operating Temperature RDS(on) max. 9.0m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Silicon Limited) 77A Lead-Free, RoHS Compliant Automotive Qualified * ID (Package Limited) 42A D Description

IRFR3410 N-Channel Enhancement Mode MOSFET Description The IRFR3410 uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This D S device is suitable for use as a G Battery protection or in other Switching application. TO-252-2L General Features V = 100V I = 30A DS D PIN2 D R

IRFR3709ZT www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET AB

IRFR3708TR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABSO

IRFR310P www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS d

IRFR3910TR www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATING

IRFR3411PBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, un

IRFR3710ZTR www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0185 at VGS = 10 V 100 60 38 nC APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless oth

IRFR3411TR www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unl

IRFR3709ZTR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET A

IRFR310T www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS d

IRFR3707ZTR www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET ABS

IRFR3709ZCT www.VBsemi.com N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET

IRFR3410TR www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unl

isc N-Channel MOSFET Transistor IRFR3710Z, IIRFR3710Z FEATURES Static drain-source on-resistance RDS(on) 18m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 75 V DSS V Gat

isc N-Channel MOSFET Transistor IRFR3410, IIRFR3410 FEATURES Static drain-source on-resistance RDS(on) 39m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency DC-DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 1

isc N-Channel MOSFET Transistor IRFR3910, IIRFR3910 FEATURES Static drain-source on-resistance RDS(on) 115m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gat

isc N-Channel MOSFET Transistor IRFR3704Z, IIRFR3704Z FEATURES Static drain-source on-resistance RDS(on) 8.4m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

isc N-Channel MOSFET Transistor IRFR3707Z, IIRFR3707Z FEATURES Static drain-source on-resistance RDS(on) 9.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So

isc N-Channel MOSFET Transistor IRFR3711Z, IIRFR3711Z FEATURES Static drain-source on-resistance RDS(on) 5.7m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

isc N-Channel MOSFET Transistor IRFR3709ZC, IIRFR3709ZC FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

isc N-Channel MOSFET Transistor IRFR3806, IIRFR3806 FEATURES Static drain-source on-resistance RDS(on) 15.8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Speed Power Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V

isc N-Channel MOSFET Transistor IRFR3504Z, IIRFR3504Z FEATURES Static drain-source on-resistance RDS(on) 9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 40 V DSS V Gate

isc N-Channel MOSFET Transistor IRFR3505, IIRFR3505 FEATURES Static drain-source on-resistance RDS(on) 13m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-

isc N-Channel MOSFET Transistor IRFR3607, IIRFR3607 FEATURES Static drain-source on-resistance RDS(on) 9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Synchronous rectifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage

isc N-Channel MOSFET Transistor IRFR3518, IIRFR3518 FEATURES Static drain-source on-resistance RDS(on) 29m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 80 V DSS V Gate-

isc N-Channel MOSFET Transistor IRFR3711, IIRFR3711 FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Buck Converters For Server Processor Power Synchronous FET ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA

iscN-Channel MOSFET Transistor IRFR310 FEATURES Low drain-source on-resistance RDS(ON) 3.6 @V =10V GS Enhancement mode Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching Voltage Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

isc N-Channel MOSFET Transistor IRFR3411, IIRFR3411 FEATURES Static drain-source on-resistance RDS(on) 44m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gate

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFR3607PbF FEATURES With TO-252(DPAK) packaging Uninterruptible power supply High speed switching Hard switched and high frequency circuits 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =

isc N-Channel MOSFET Transistor IRFR3708, IIRFR3708 FEATURES Static drain-source on-resistance RDS(on) 12.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

isc N-Channel MOSFET Transistor IRFR3709Z, IIRFR3709Z FEATURES Static drain-source on-resistance RDS(on) 6.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Frequency Synchronous Buck Converters For Computer Processor Power ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA