ZXMN10A07ZTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMN10A07ZTA
Código: 7N10
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 10 nC
trⓘ - Tiempo de subida: 1.5 nS
Cossⓘ - Capacitancia de salida: 12 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
Paquete / Cubierta: SOT-89
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ZXMN10A07ZTA Datasheet (PDF)
zxmn10a07zta.pdf
A Product Line of Diodes IncorporatedZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-ResistanceID max Low ThresholdV(BR)DSS RDS(on) Max TA = 25C (Note 6) Fast Switching Speed 700m @ VGS = 10V 1.4A Low Gate Drive 100V 900m @ VGS = 6V 1.2A Totally Lead-Free & Fully RoHS compliant (Not
zxmn10a07zta.pdf
ZXMN10A07ZTAwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.102 at VGS = 10 V 4.20.120 at VGS = 6 V 100 3.8 2.9 nC0.125 at VGS = 4.5 V 3.6APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVs
zxmn10a07z.pdf
ZXMN10A07Z100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS=100V : RDS(on)=0.7 ; ID=1.4ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage power management applications.FEATURESSOT89 Low on-resistance
zxmn10a07fta zxmn10a07ftc.pdf
A Product Line ofDiodes IncorporatedZXMN10A07F100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE Product Summary Features Low On-ResistanceID Low ThresholdBVDSS RDS(ON) Max TA = +25C (Note 6) Fast Switching Speed 700m @ VGS = 10V 0.76A Low Gate Drive 100V 900m @ VGS = 6V 0.67A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Hal
zxmn10a07f.pdf
ZXMN10A07F100V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS= 100V : RDS(on)= 0.7 ID= 0.8ADESCRIPTIONThis new generation of Trench MOSFETs from Zetex utilizes a unique structure thatcombines the benefits of low on-resistance with fast switching speed. This makesthem ideal for high efficiency, low voltage power management applications.FEATURESSOT23 Low on-resistance
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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