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ZXMN10A07ZTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN10A07ZTA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 1.5 nS
   Cossⓘ - Capacitancia de salida: 12 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.7 Ohm
   Paquete / Cubierta: SOT-89

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ZXMN10A07ZTA Datasheet (PDF)

 ..1. Size:330K  diodes
 zxmn10a07zta.pdf pdf_icon

ZXMN10A07ZTA

A Product Line of Diodes Incorporated ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-Resistance ID max Low Threshold V(BR)DSS RDS(on) Max TA = 25 C (Note 6) Fast Switching Speed 700m @ VGS = 10V 1.4A Low Gate Drive 100V 900m @ VGS = 6V 1.2A Totally Lead-Free & Fully RoHS compliant (Not

 ..2. Size:744K  cn vbsemi
 zxmn10a07zta.pdf pdf_icon

ZXMN10A07ZTA

ZXMN10A07ZTA www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.102 at VGS = 10 V 4.2 0.120 at VGS = 6 V 100 3.8 2.9 nC 0.125 at VGS = 4.5 V 3.6 APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVs

 4.1. Size:186K  diodes
 zxmn10a07z.pdf pdf_icon

ZXMN10A07ZTA

ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=100V RDS(on)=0.7 ; ID=1.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. FEATURES SOT89 Low on-resistance

 5.1. Size:265K  diodes
 zxmn10a07fta zxmn10a07ftc.pdf pdf_icon

ZXMN10A07ZTA

A Product Line of Diodes Incorporated ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE Product Summary Features Low On-Resistance ID Low Threshold BVDSS RDS(ON) Max TA = +25 C (Note 6) Fast Switching Speed 700m @ VGS = 10V 0.76A Low Gate Drive 100V 900m @ VGS = 6V 0.67A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Hal

MOSTRAR MÁS

Otros transistores... ZXM66N03N8TA , ZXM66P02N8TA , ZXM66P02N8TC , ZXM66P03N8TA , ZXMD63C02X , ZXMN0545G4TA , ZXMN10A07FTA , ZXMN10A07FTC , IRF9540N , ZXMN10A08E6TA , ZXMN10A08E6TC , ZXMN10A09KTC , ZXMN10A11GTA , ZXMN10A11GTC , ZXMN10A11KTC , ZXMN10A25GTA , ZXMN10A25KTC .

 

 
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