ZXMN10B08E6TA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMN10B08E6TA 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.1 nS
Cossⓘ - Capacitancia de salida: 29 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
Encapsulados: SOT-23-6
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ZXMN10B08E6TA datasheet
..1. Size:198K zetex
zxmn10b08e6ta.pdf 
ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.230 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resis
2.1. Size:198K zetex
zxmn10b08e6tc.pdf
ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.230 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resis
3.1. Size:200K diodes
zxmn10b08e6.pdf
ZXMN10B08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.230 ID = 1.9A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resis
8.1. Size:174K diodes
zxmn10a08e6ta zxmn10a08e6tc.pdf
A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistance Max ID Fast switching speed V(BR)DSS Max RDS(on) TA = 25 C Totally Lead-Free & Fully RoHS compliant (Note 1) (Note 5) Halogen and Antimony Free. Green Device (Note 2) 250m @ VGS = 10V 1.9A Qualified t
8.2. Size:641K diodes
zxmn10a11gtc zxmn10a11g zxmn10a11gta.pdf
A Product Line of Diodes Incorporated ZXMN10A11G 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25 C Low input capacitance 350m @ VGS = 10V 2.4A Qualified to AEC-Q101 Standards for High Reliability 100V 450m @ VGS = 6.0V 2.1A Mechanical Data Case SOT2
8.3. Size:570K diodes
zxmn10a11g.pdf
ZXMN10A11G Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast Switching Speed ID BVDSS RDS(on) Low Gate Drive TA = +25 C Low Input Capacitance 350m @ VGS = 10V 2.4A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 100V 450m @ VGS = 6.0V 2.1A Halogen and Antimony Free. Green Device (Note 3) Qualifie
8.4. Size:265K diodes
zxmn10a07fta zxmn10a07ftc.pdf
A Product Line of Diodes Incorporated ZXMN10A07F 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 PACKAGE Product Summary Features Low On-Resistance ID Low Threshold BVDSS RDS(ON) Max TA = +25 C (Note 6) Fast Switching Speed 700m @ VGS = 10V 0.76A Low Gate Drive 100V 900m @ VGS = 6V 0.67A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Hal
8.5. Size:608K diodes
zxmn10a25k.pdf
ZXMN10A25K 100V DPAK N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) (V) ID (A) 0.125 @ VGS= 10V 6.4 100 0.150 @ VGS= 6V 5.8 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resistanc
8.6. Size:655K diodes
zxmn10a09k.pdf
A Product Line of Diodes Incorporated ZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low input capacitance ID V(BR)DSS RDS(on) Low on-resistance TA = 25 C Fast switching speed 85m @ VGS = 10V 7.7A Green Component and RoHS compliant (Note 1) 100V
8.7. Size:330K diodes
zxmn10a07zta.pdf
A Product Line of Diodes Incorporated ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT89 PACKAGE Product Summary Features and Benefits Low On-Resistance ID max Low Threshold V(BR)DSS RDS(on) Max TA = 25 C (Note 6) Fast Switching Speed 700m @ VGS = 10V 1.4A Low Gate Drive 100V 900m @ VGS = 6V 1.2A Totally Lead-Free & Fully RoHS compliant (Not
8.8. Size:186K diodes
zxmn10a07z.pdf
ZXMN10A07Z 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=100V RDS(on)=0.7 ; ID=1.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. FEATURES SOT89 Low on-resistance
8.9. Size:234K diodes
zxmn10a08e6.pdf
A Product Line of Diodes Incorporated ZXMN10A08E6 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25 C Qualified to AEC-Q101 Standards for High Reliability 100V 0.25 1.9A Mechanical Data Case SOT23-6
8.10. Size:179K diodes
zxmn10a08dn8.pdf
ZXMN10A08DN8 100V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 100V; RDS(ON) = 0.25 ID = 2.1A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistanc
8.12. Size:664K diodes
zxmn10a11k zxmn10a11ktc.pdf
A Product Line of Diodes Incorporated ZXMN10A11K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low input capacitance TA = 25 C Green Component and RoHS compliant (Note 1) 350m @ VGS = 10V 3.5A Qualified to AEC-Q101 Standards for High Reliability 100V 450m @ VGS = 6V 3.1A
8.13. Size:625K diodes
zxmn10a25g.pdf
ZXMN10A25G 100V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.125 @ VGS= 10V 4 100 0.150 @ VGS= 6V 3.7 Description This new generation trench MOSFET from Zetex features a unique structure which combininthe benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resist
8.14. Size:441K diodes
zxmn10a08g.pdf
ZXMN10A08G 100V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.250 @ VGS= 10V 2.9 100 0.300 @ VGS= 6V 2.6 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management G applications. Features S Low on-r
8.15. Size:655K diodes
zxmn10a09k zxmn10a09ktc.pdf
A Product Line of Diodes Incorporated ZXMN10A09K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Low input capacitance ID V(BR)DSS RDS(on) Low on-resistance TA = 25 C Fast switching speed 85m @ VGS = 10V 7.7A Green Component and RoHS compliant (Note 1) 100V
8.16. Size:187K diodes
zxmn10a25ktc.pdf
A Product Line of Diodes Incorporated Green ZXMN10A25K 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance Max ID V(BR)DSS RDS(ON) Package Fast Switching Speed TA = +25 C Low Gate Drive 125m @ VGS= 10V 6.4A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) TO252 100V Halogen and Antimony Free. Green Device (Note
8.17. Size:1582K kexin
zxmn10a08g.pdf
SMD Type MOSFET N-Channel MOSFET ZXMN10A08G (KXMN10A08G) Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 VDS (V) = 100V ID = 2.9 A (VGS = 10V) RDS(ON) 250m (VGS = 10V) 1 2 3 D RDS(ON) 300m (VGS = 6V) 0.250 2.30 (typ) Gauge Plane 1.Gate G 2.Drain 0.70 0.1 3.Source S 4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25 Paramete
8.18. Size:623K zetex
zxmn10a25gta.pdf
ZXMN10A25G 100V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.125 @ VGS= 10V 4 100 0.150 @ VGS= 6V 3.7 Description This new generation trench MOSFET from Zetex features a unique structure which combininthe benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resist
8.19. Size:744K cn vbsemi
zxmn10a07zta.pdf
ZXMN10A07ZTA www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.102 at VGS = 10 V 4.2 0.120 at VGS = 6 V 100 3.8 2.9 nC 0.125 at VGS = 4.5 V 3.6 APPLICATIONS DC/DC Converters / Boost Converters Load Switch LED Backlighting in LCD TVs
Otros transistores... ZXMN10A08E6TA, ZXMN10A08E6TC, ZXMN10A09KTC, ZXMN10A11GTA, ZXMN10A11GTC, ZXMN10A11KTC, ZXMN10A25GTA, ZXMN10A25KTC, K4145, ZXMN10B08E6TC, ZXMN15A27KTC, ZXMN20B28KTC, ZXMN2A01E6TA, ZXMN2A01E6TC, ZXMN2A01FTA, ZXMN2A01FTC, ZXMN2A02N8TA
