ZXMN15A27KTC Todos los transistores

 

ZXMN15A27KTC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN15A27KTC
   Código: ZXMN15A27
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 9.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 2.55 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 6.6 nC
   trⓘ - Tiempo de subida: 12.7 nS
   Cossⓘ - Capacitancia de salida: 64.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
   Paquete / Cubierta: TO-252-3L
 

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ZXMN15A27KTC Datasheet (PDF)

 ..1. Size:664K  diodes
zxmn15a27k zxmn15a27ktc.pdf pdf_icon

ZXMN15A27KTC

A Product Line ofDiodes IncorporatedZXMN15A27K 150V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) High avalanche energy pulse withstand capability TA = 25C Low input capacitance Low on-resistanc

 9.1. Size:174K  diodes
zxmn10a08e6ta zxmn10a08e6tc.pdf pdf_icon

ZXMN15A27KTC

A Product Line ofDiodes Incorporated ZXMN10A08E6100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceMax ID Fast switching speed V(BR)DSS Max RDS(on) TA = 25C Totally Lead-Free & Fully RoHS compliant (Note 1) (Note 5) Halogen and Antimony Free. Green Device (Note 2) 250m @ VGS = 10V 1.9A Qualified t

 9.2. Size:641K  diodes
zxmn10a11gtc zxmn10a11g zxmn10a11gta.pdf pdf_icon

ZXMN15A27KTC

A Product Line ofDiodes IncorporatedZXMN10A11G100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS = 10V 2.4A Qualified to AEC-Q101 Standards for High Reliability 100V 450m @ VGS = 6.0V 2.1A Mechanical Data Case: SOT2

 9.3. Size:570K  diodes
zxmn10a11g.pdf pdf_icon

ZXMN15A27KTC

ZXMN10A11G Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast Switching Speed ID BVDSS RDS(on) Low Gate Drive TA = +25C Low Input Capacitance 350m @ VGS = 10V 2.4A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 100V 450m @ VGS = 6.0V 2.1A Halogen and Antimony Free. Green Device (Note 3) Qualifie

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