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ZXMN6A07FTC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN6A07FTC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.625 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 1.4 nS
   Cossⓘ - Capacitancia de salida: 19.5 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
   Paquete / Cubierta: SOT-23
 

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ZXMN6A07FTC Datasheet (PDF)

 ..1. Size:527K  zetex
 zxmn6a07ftc.pdf pdf_icon

ZXMN6A07FTC

ZXMN6A07F60V SOT23 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 1.4600.350 @ VGS= 4.5V 1.2DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS

 4.1. Size:527K  zetex
 zxmn6a07fta.pdf pdf_icon

ZXMN6A07FTC

ZXMN6A07F60V SOT23 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 1.4600.350 @ VGS= 4.5V 1.2DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS

 5.1. Size:531K  diodes
 zxmn6a07f.pdf pdf_icon

ZXMN6A07FTC

ZXMN6A07F60V SOT23 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 1.4600.350 @ VGS= 4.5V 1.2DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS

 5.2. Size:1319K  cn vbsemi
 zxmn6a07f.pdf pdf_icon

ZXMN6A07FTC

ZXMN6A07Fwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G

MOSTRAR MÁS

Otros transistores... ZXMN3B04N8TA , ZXMN3B04N8TC , ZXMN3B14FTA , ZXMN3F30FHTA , ZXMN4A06GQ , ZXMN4A06GTA , ZXMN4A06KTC , ZXMN6A07FTA , RU7088R , ZXMN6A07ZTA , ZXMN6A08E6Q , ZXMN6A08E6TA , ZXMN6A08E6TC , ZXMN6A08GTA , ZXMN6A08KTC , ZXMN6A09GTA , ZXMN6A09KTC .

History: SSM3K04FS | IPW60R070C6 | IPP65R310CFD | AP10TN028YT | STF15N95K5 | GMP80N75 | 2SK494

 

 
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