ZXMN6A08E6TC Todos los transistores

 

ZXMN6A08E6TC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN6A08E6TC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.1 nS
   Cossⓘ - Capacitancia de salida: 44.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SOT-23-6
 

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ZXMN6A08E6TC Datasheet (PDF)

 ..1. Size:652K  diodes
 zxmn6a08e6tc zxmn6a08e6 zxmn6a08e6ta.pdf pdf_icon

ZXMN6A08E6TC

A Product Line ofDiodes IncorporatedZXMN6A08E660V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID V(BR)DSS RDS(on) Fast switching speed TA = 25C Low gate drive 80m @ VGS=10V 3.5A Low threshold100V Green component and RoHS compliant (Note 1) 150m @ VGS=4.5V 2.5A Qualified to AEC-Q101 S

 4.1. Size:568K  diodes
 zxmn6a08e6.pdf pdf_icon

ZXMN6A08E6TC

ZXMN6A08E6 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Fast Switching Speed TA = +25C Low Gate Drive 80m @ VGS=10V 3.5A 60V Low Threshold 150m @ VGS=4.5V 2.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3

 4.2. Size:458K  diodes
 zxmn6a08e6q.pdf pdf_icon

ZXMN6A08E6TC

ZXMN6A08E6Q 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID V(BR)DSS RDS(ON) Fast Switching Speed TA = +25C Low Gate Drive 80m @ VGS=10V 3.5A 60V Low Threshold 150m @ VGS=4.5V 2.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note

 6.1. Size:660K  diodes
 zxmn6a08k.pdf pdf_icon

ZXMN6A08E6TC

A Product Line ofDiodes IncorporatedZXMN6A08K60V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits Low on-resistance ID V(BR)DSS RDS(on) Fast switching speed TA = 25C Green component and RoHS compliant (Note 1) 80m @ VGS= 10V 7.90A 60V 150m @ VGS= 4.5V 5.75A Mech

MOSTRAR MÁS

Otros transistores... ZXMN4A06GQ , ZXMN4A06GTA , ZXMN4A06KTC , ZXMN6A07FTA , ZXMN6A07FTC , ZXMN6A07ZTA , ZXMN6A08E6Q , ZXMN6A08E6TA , AON7403 , ZXMN6A08GTA , ZXMN6A08KTC , ZXMN6A09GTA , ZXMN6A09KTC , ZXMN6A11GTA , ZXMN6A11GTC , ZXMN6A11ZTA , ZXMN6A25GTA .

History: AP16N50I | 12N65H | IXFX38N80Q2 | 2SK3686-01 | TN2404K | STW37N60DM2AG | STT468A

 

 
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