ZXMN6A25GTA Todos los transistores

 

ZXMN6A25GTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN6A25GTA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 104 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: SOT-223
 

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ZXMN6A25GTA Datasheet (PDF)

 ..1. Size:603K  diodes
 zxmn6a25gta.pdf pdf_icon

ZXMN6A25GTA

ZXMN6A25G Green60V SOT223 N-channel enhancement mode MOSFET Product Summary Features and Benefits ID Low Input Capacitance BVDSS RDS(on) max TA = +25C Low On-Resistance Fast Switching Speed 50m @ VGS = 10V 6.7A 60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 70m @ VGS = 4.5V 5.7A Halogen and Antimony Free. Green Device (Note 3)

 5.1. Size:659K  diodes
 zxmn6a25g.pdf pdf_icon

ZXMN6A25GTA

ZXMN6A25G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.050 @ VGS = 10V 6.7600.070 @ VGS = 4.5V 5.7DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementGapplications.FeaturesS Low on-r

 6.1. Size:721K  diodes
 zxmn6a25dn8.pdf pdf_icon

ZXMN6A25GTA

ZXMN6A25DN8Dual 60V SO8 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.050 @ VGS = 10V 5600.070 @ VGS = 4.5V 4.2DescriptionD1 D2This new generation trench MOSFET from Zetexfeatures a unique structure combining the benefits oflow on-resistance and fast switching, making it idealfor high efficiency power management applications. G1 G2FeaturesS1 S2

 6.2. Size:807K  diodes
 zxmn6a25k.pdf pdf_icon

ZXMN6A25GTA

ZXMN6A25K60V DPAK N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.050 @ VGS= 10V 10.7600.070 @ VGS= 4.5V 9DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resistance

MOSTRAR MÁS

Otros transistores... ZXMN6A08E6TC , ZXMN6A08GTA , ZXMN6A08KTC , ZXMN6A09GTA , ZXMN6A09KTC , ZXMN6A11GTA , ZXMN6A11GTC , ZXMN6A11ZTA , AO3407 , ZXMN6A25KTC , ZXMN7A11GTA , ZXMN7A11KTC , ZXMNS3BM832TA , ZXMP10A13FTA , ZXMP10A16KTC , ZXMP10A17E6Q , ZXMP10A17E6TA .

History: RS1E240BN | HAT2199WP | PSMN4R5-40PS | SUP90N08-6M8P | 9N90L-TC3-T | LNC08R055W3 | 2SK3604-01SJ

 

 
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