ZXMN6A25KTC Todos los transistores

 

ZXMN6A25KTC MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMN6A25KTC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 9.85 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 104 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: DPAK

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ZXMN6A25KTC datasheet

 ..1. Size:805K  zetex
 zxmn6a25ktc.pdf pdf_icon

ZXMN6A25KTC

ZXMN6A25K 60V DPAK N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.050 @ VGS= 10V 10.7 60 0.070 @ VGS= 4.5V 9 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resistance

 5.1. Size:807K  diodes
 zxmn6a25k.pdf pdf_icon

ZXMN6A25KTC

ZXMN6A25K 60V DPAK N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.050 @ VGS= 10V 10.7 60 0.070 @ VGS= 4.5V 9 Description This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. Features D Low on-resistance

 6.1. Size:659K  diodes
 zxmn6a25g.pdf pdf_icon

ZXMN6A25KTC

ZXMN6A25G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.050 @ VGS = 10V 6.7 60 0.070 @ VGS = 4.5V 5.7 Description D This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management G applications. Features S Low on-r

 6.2. Size:721K  diodes
 zxmn6a25dn8.pdf pdf_icon

ZXMN6A25KTC

ZXMN6A25DN8 Dual 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 0.050 @ VGS = 10V 5 60 0.070 @ VGS = 4.5V 4.2 Description D1 D2 This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications. G1 G2 Features S1 S2

MOSTRAR MÁS

Otros transistores... ZXMN6A08GTA , ZXMN6A08KTC , ZXMN6A09GTA , ZXMN6A09KTC , ZXMN6A11GTA , ZXMN6A11GTC , ZXMN6A11ZTA , ZXMN6A25GTA , 60N06 , ZXMN7A11GTA , ZXMN7A11KTC , ZXMNS3BM832TA , ZXMP10A13FTA , ZXMP10A16KTC , ZXMP10A17E6Q , ZXMP10A17E6TA , ZXMP10A18GTA .

 

 

 

 

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