ZXMP10A17E6TA Todos los transistores

 

ZXMP10A17E6TA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMP10A17E6TA

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.5 nS

Cossⓘ - Capacitancia de salida: 36.6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: SOT-23-6

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ZXMP10A17E6TA datasheet

 ..1. Size:699K  diodes
 zxmp10a17e6 zxmp10a17e6ta.pdf pdf_icon

ZXMP10A17E6TA

A Product Line of Diodes Incorporated ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25 C Low input capacitance 350m @ VGS= -10V -1.6 Qualified to AEC-Q101 Standards for High Reliability -1

 3.1. Size:639K  diodes
 zxmp10a17e6q.pdf pdf_icon

ZXMP10A17E6TA

ZXMP10A17E6Q 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(ON) TA = +25 C Low Gate Drive 350m @ VGS= -10V -1.6A Low Input Capacitance -100V 450m @ VGS= -6.0V -1.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3)

 3.2. Size:600K  diodes
 zxmp10a17e6.pdf pdf_icon

ZXMP10A17E6TA

ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(on) TA = +25 C Low Gate Drive 350m @ VGS= -10V -1.6A Low Input Capacitance -100V 450m @ VGS= -6V -1.4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Q

 5.1. Size:636K  diodes
 zxmp10a17g.pdf pdf_icon

ZXMP10A17E6TA

A Product Line of Diodes Incorporated ZXMP10A17G 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25 C Low input capacitance 350m @ VGS= -10V -2.4 Qualified to AEC-Q101 Standards for High Reliability -10

MOSTRAR MÁS

Otros transistores... ZXMN6A25GTA , ZXMN6A25KTC , ZXMN7A11GTA , ZXMN7A11KTC , ZXMNS3BM832TA , ZXMP10A13FTA , ZXMP10A16KTC , ZXMP10A17E6Q , IRF840 , ZXMP10A18GTA , ZXMP10A18KTC , ZXMP2120E5TA , ZXMP2120FFTA , ZXMP2120G4TA , ZXMP3A13FTA , ZXMP3A16GTA , ZXMP3A16N8TA .

History: NTD4909N

 

 

 


History: NTD4909N

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