ZXMP2120E5TA Todos los transistores

 

ZXMP2120E5TA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMP2120E5TA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.122 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 28 Ohm
   Paquete / Cubierta: SOT-23-5
 

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ZXMP2120E5TA Datasheet (PDF)

 ..1. Size:384K  zetex
 zxmp2120e5ta.pdf pdf_icon

ZXMP2120E5TA

ZXMP2120E5200V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mADESCRIPTIONThis 200V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device inclu

 4.1. Size:386K  diodes
 zxmp2120e5.pdf pdf_icon

ZXMP2120E5TA

ZXMP2120E5200V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mADESCRIPTIONThis 200V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device inclu

 6.1. Size:416K  diodes
 zxmp2120g4.pdf pdf_icon

ZXMP2120E5TA

ZXMP2120G4200V P-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS =-200V; RDS(ON) = 25 ; ID = 200mADESCRIPTIONThis 200V enhancement mode P-channel MOSFET provides users with acompetitive specification offering efficient power handling capability, highimpedance and is free from thermal runaway and thermally inducedsecondary breakdown. Applications benefiting from this device includ

 6.2. Size:417K  diodes
 zxmp2120ff.pdf pdf_icon

ZXMP2120E5TA

ZXMP2120FF200V SOT23F P-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (mA)-200 28 @ VGS= -10V -137DescriptionThis 200V enhancement mode P-channel MOSFET provides users witha competitive specification offering efficient power handling capability,high impedance and freedom from thermal runaway and thermallyinduced secondary breakdown.Applications benefiting from

MOSTRAR MÁS

Otros transistores... ZXMN7A11KTC , ZXMNS3BM832TA , ZXMP10A13FTA , ZXMP10A16KTC , ZXMP10A17E6Q , ZXMP10A17E6TA , ZXMP10A18GTA , ZXMP10A18KTC , IRF540N , ZXMP2120FFTA , ZXMP2120G4TA , ZXMP3A13FTA , ZXMP3A16GTA , ZXMP3A16N8TA , ZXMP3A17E6TA , ZXMP3F30FHTA , ZXMP4A16GTA .

History: STP12N65M5 | VBE1307 | PMV30ENEA

 

 
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