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ZXMP6A17E6Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMP6A17E6Q
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.4 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: SOT-26
 

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ZXMP6A17E6Q Datasheet (PDF)

 ..1. Size:493K  diodes
 zxmp6a17e6q.pdf pdf_icon

ZXMP6A17E6Q

ZXMP6A17E6Q 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Fast Switching Speed V(BR)DSS RDS(on) Max TA = +25C Low Threshold (Note 7) Low Gate Drive -3.0 A 125m @ VGS = -10V Low Input Capacitance -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 190m @ VGS = -4.5V -2.4 A

 4.1. Size:665K  diodes
 zxmp6a17e6 zxmp6a17e6ta.pdf pdf_icon

ZXMP6A17E6Q

A Product Line ofDiodes IncorporatedZXMP6A17E660V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID Max Fast switching speed V(BR)DSS RDS(on) Max TA = 25C Low threshold(Note 5) Low gate drive Low input capacitance 125m @ VGS = -10V -3.0 A Lead Free, RoHS Compliant (Note 1) -60V 190m @

 4.2. Size:542K  diodes
 zxmp6a17e6.pdf pdf_icon

ZXMP6A17E6Q

ZXMP6A17E6 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max Fast Switching Speed V(BR)DSS RDS(on) Max TA = +25C Low Threshold (Note 6) Low Gate Drive 125m @ VGS = -10V -3.0 A Low Input Capacitance -60V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 190m @ VGS = -4.5V -2.4 A

 6.1. Size:170K  diodes
 zxmp6a17dn8.pdf pdf_icon

ZXMP6A17E6Q

ZXMP6A17DN8DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = -60V; RDS(ON) = 0.125 ; ID= -3.2ADESCRIPTIONThis new generation of high cell density trench MOSFETs from Zetex utilizes aunique structure that combines the benefits of low on-resistance with fastswitching speed. This makes them ideal for high efficiency, low voltage, powermanagement applications.FEATURES

MOSTRAR MÁS

Otros transistores... ZXMP3F30FHTA , ZXMP4A16GTA , ZXMP4A16KTC , ZXMP4A57E6TA , ZXMP6A13FQ , ZXMP6A13FTA , ZXMP6A13GTA , ZXMP6A16KTC , IRFP250N , ZXMP6A17E6TA , ZXMP6A17GQ , ZXMP6A17GTA , ZXMP6A17KTC , ZXMP6A17N8TC , ZXMP6A18KTC , ZXMP7A17GQ , ZXMP7A17GTA .

History: HM70N80A | P6403FMG | CED02N6A | AUIRLI2505 | RQJ0306FQDQS | RQJ0202VGDQA | ME2N7002D

 

 
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