ZXMP6A17GTA Todos los transistores

 

ZXMP6A17GTA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMP6A17GTA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.4 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
   Paquete / Cubierta: SOT-223
 

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ZXMP6A17GTA Datasheet (PDF)

 ..1. Size:635K  diodes
 zxmp6a17g zxmp6a17gta.pdf pdf_icon

ZXMP6A17GTA

A Product Line ofDiodes IncorporatedZXMP6A17G60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 125m @ VGS= -10V -4.3A Green component and RoHS compliant (Note 1) -60V Qualified to AEC-Q101 Standards for High Reliability 190m

 5.1. Size:216K  diodes
 zxmp6a17gq.pdf pdf_icon

ZXMP6A17GTA

ZXMP6A17GQ Green60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed V(BR)DSS RDS(on) TA = +25C Low Gate Drive Low Input Capacitance 125m @ VGS= -10V -4.3A -60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 190m @ VGS= -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Quali

 5.2. Size:467K  diodes
 zxmp6a17g.pdf pdf_icon

ZXMP6A17GTA

ZXMP6A17G Green60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Fast Switching Speed BVDSS RDS(on) TA = +25C Low Gate Drive Low Input Capacitance 125m @ VGS= -10V -4.3A -60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 190m @ VGS= -4.5V -3.5A Halogen and Antimony Free. Green Device (Note 3) Qualified

 6.1. Size:665K  diodes
 zxmp6a17e6 zxmp6a17e6ta.pdf pdf_icon

ZXMP6A17GTA

A Product Line ofDiodes IncorporatedZXMP6A17E660V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceID Max Fast switching speed V(BR)DSS RDS(on) Max TA = 25C Low threshold(Note 5) Low gate drive Low input capacitance 125m @ VGS = -10V -3.0 A Lead Free, RoHS Compliant (Note 1) -60V 190m @

MOSTRAR MÁS

Otros transistores... ZXMP4A57E6TA , ZXMP6A13FQ , ZXMP6A13FTA , ZXMP6A13GTA , ZXMP6A16KTC , ZXMP6A17E6Q , ZXMP6A17E6TA , ZXMP6A17GQ , 2SK3878 , ZXMP6A17KTC , ZXMP6A17N8TC , ZXMP6A18KTC , ZXMP7A17GQ , ZXMP7A17GTA , ZXMP7A17KTC , ZXMS6002GQ , ZXMS6004DGQ .

History: SVGP066R1NL5 | IXFH36N55Q | SHD218602B | NTD4856N-1G | WFU5N60B | TPCF8304 | SVF10N60K

 

 
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