ZXMS6004SGQ Todos los transistores

 ..1. Size:379K  diodes
 zxms6004sgq.pdf

ZXMS6004SGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS= 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 480mJ Short Circuit Pro

 4.1. Size:480K  diodes
 zxms6004sg.pdf

A Product Line of Diodes Incorporated ZXMS6004SG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.3 A Clamping energy 480mJ Description The ZXMS6004SG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-

 6.1. Size:454K  diodes
 zxms6004ffq.pdf

ZXMS6004FFQ DMN2027USS 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuos Drain Source Voltage 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 90mJ Short Circ

 6.2. Size:414K  diodes
 zxms6004ff.pdf

A Product Line of Diodes Incorporated ZXMS6004FF 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.3 A Clamping energy 90mJ Description The ZXMS6004FF is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-v

 6.3. Size:479K  diodes
 zxms6004dg.pdf

A Product Line of Diodes Incorporated ZXMS6004DG 60V N-channel self protected enhancement mode Intellifet MOSFET Summary Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.3 A Clamping energy 490mJ Description The ZXMS6004DG is a self protected low side MOSFET with logic level input. It integrates over-temperature, over-current, over-

 6.4. Size:530K  diodes
 zxms6004dt8q.pdf

ZXMS6004DT8Q 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS = 60V Compact Dual Package On-State Resistance 500m Low Input Current Nominal Load Current (VIN = 5V) 1.2A Logic Level Input (3.3V and 5V) Clamping Energy 210mJ Short Circuit Protection with Auto

 6.5. Size:236K  diodes
 zxms6004dt8.pdf

A Product Line of Diodes Incorporated ZXMS6004DT8 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET SUMMARY Continuous drain source voltage 60 V On-state resistance 500 m Nominal load current (VIN = 5V) 1.2 A Clamping Energy 210 mJ SM8 Package DESCRIPTION The ZXMS6004DT8 is a dual self protected low side MOSFET with logic level input. It integrates ove

 6.6. Size:425K  diodes
 zxms6004dgq.pdf

ZXMS6004DGQ 60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE INTELLIFET MOSFET Product Summary Features and Benefits Continuous Drain Source Voltage VDS= 60V Compact High Power Dissipation Package On-State Resistance 500m Low Input Current Nominal load current (VIN = 5V) 1.3A Logic Level Input (3.3V and 5V) Clamping Energy 490mJ Short Circuit P

 6.7. Size:504K  kexin
 zxms6004ff.pdf

SMD Type MOSFET Transistors N-Channel Self Protected Enhancement Mode MOSFET ZXMS6004FF(KXMS6004FF) Features SOT-23 Unit mm +0.1 2.9-0.1 Compact high power dissipation package +0.1 0.4 -0.1 Low input current 3 Logic Level Input (3.3V and 5V) Short circuit protection with auto restart Over voltage protection (active clamp) 12 +0.1 +0.05 0.95-0.1 0.1 -0.01 Therm