SI1016CX MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SI1016CX
   Código: 5
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.22 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 0.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 0.5 nC
   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 14 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.396 Ohm
   Paquete / Cubierta: SOT-563F

Búsqueda de reemplazo de MOSFET SI1016CX

SI1016CX Datasheet (PDF)

..1. Size:197K vishay
si1016cx.pdf

New ProductSi1016CXVishay SiliconixComplementary N- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition TrenchFET Power MOSFETs0.396 at VGS = 4.5 V 0.5 High-Side Switching0.456 at VGS = 2.5 V 0.2 Ease in Driving SwitchesN-Channel 20 0.75 nC0.546 at VGS = 1

8.1. Size:124K vishay
si1016x.pdf

Si1016XVishay SiliconixComplementary N- and P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (mA)Definition0.70 at VGS = 4.5 V 600 TrenchFET Power MOSFETs0.85 at VGS = 2.5 V 500 N-Channel 20 2000 V ESD Protection Very Small Footprint 1.25 at VGS = 1.8 V 350 High-Side Switching

9.1. Size:154K vishay
si1012cr.pdf

Si1012CRVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET: 1.2 V RatedVDS (V) RDS(on) () ID (mA) Qg (Typ.) 100 % Rg Tested0.396 at VGS = 4.5 V 600 Gate-Source ESD Protected: 1000 V Material categorization:0.456 at VGS = 2.5 V 500For definitions of compliance please see20 0.750.546 at VGS = 1.8 V 350www.vis

9.2. Size:217K vishay
si1013r si1013x.pdf

Si1013R/XVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition1.2 at VGS = - 4.5 V - 350 High-Side Switching1.6 at VGS = - 2.5 V Low On-Resistance: 1.2 - 20 - 300 Low Threshold: 0.8 V (Typ.)2.7 at VGS = - 1.8 V - 150 Fast Switching Speed: 14 ns

9.3. Size:192K vishay
si1013r-x.pdf

9.4. Size:156K vishay
si1011x.pdf

Si1011XVishay SiliconixP-Channel 12 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) Typical ESD protection: 700 V (HBM)0.640 at VGS = - 4.5 V - 0.48 Fast Switching Speed0.880 at VGS = - 2.5 V - 0.41 Material categorization:For definitions of compliance please see1.200 at VGS = - 1.8 V - 0.35 1.1

9.5. Size:171K vishay
si1013cx.pdf

Si1013CXVishay SiliconixP-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET0.760 at VGS = - 4.5 V - 0.45 100 % Rg Tested1.040 at VGS = - 2.5 V - 0.40 1 nC- 20 Typical ESD protection: 1000 V (HBM)1.5 at VGS = - 1.8 V - 1.5 Fast Switchin

9.6. Size:175K vishay
si1012r-x.pdf

Si1012R/XVishay SiliconixN-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (mA)Definition0.70 at VGS = 4.5 V 600 TrenchFET Power MOSFET: 1.8 V Rated Gate-Source ESD Protected: 2000 V0.85 at VGS = 2.5 V 20 500 High-Side Switching1.25 at VGS = 1.8 V 350 Low On-Resistance: 0.7

9.7. Size:230K vishay
si1012r si1012x.pdf

Si1012R, Si1012XVishay SiliconixN-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET: 1.8 V RatedVDS (V) RDS(on) ()ID (mA) Gate-Source ESD Protected: 2000 V0.70 at VGS = 4.5 V 600 High-Side Switching0.85 at VGS = 2.5 V Low On-Resistance: 0.7 20 500 Low Threshold: 0.8 V (typ.)1.25 at VGS = 1.8 V 350 Fast Switc

9.8. Size:869K mcc
si1012.pdf

SI1012Features Low Threshold ESD Protected Gate Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-CHANNEL Halogen Free Available Upon Request By Adding Suffix "-HF"MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range : -55C to

9.9. Size:477K lrc
lsi1012lt1g s-lsi1012lt1g.pdf

LESHAN RADIO COMPANY, LTD.LSI1012LT1GN-Channel 1.8-V (G-S) MOSFETS-LSI1012LT1GFEATURES3D TrenchFETr Power MOSFET: 1.8-V RatedD Gate-Source ESD ProtectedD High-Side Switching1D Low On-Resistance: 0.7 WD Low Threshold: 0.8 V (typ)2D Fast Switching Speed: 10 nsD S- Prefix for Automotive and Other Applications Requiring SOT-23Unique Site and Control Change Requiremen

9.10. Size:248K lrc
lsi1012xt1g.pdf

LESHAN RADIO COMPANY, LTD.N-Channel 1.8-V (G-S) MOSFETLSI1012XT1GFEATURESD TrenchFETr Power MOSFET: 1.8-V RatedD Gate-Source ESD Protected: 2000 VD High-Side SwitchingD Low On-Resistance: 0.7 WD Low Threshold: 0.8 V (typ)D Fast Switching Speed: 10 nsSC-89BENEFITSD Ease in Driving SwitchesD Low Offset (Error) VoltageGate 1D Low-Voltage OperationD High-Speed Circui

9.11. Size:364K cn tech public
si1012cr.pdf

WWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TW WWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWWWW.TECHPUBLIC.COM.TWwww.techpublic.com.tw

9.12. Size:350K cn tech public
si1013r.pdf

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