SI1032X Todos los transistores

 ..1. Size:196K  vishay
 si1032r si1032x.pdf

Si1032R/X Vishay Siliconix N-Channel 1.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 5 at VGS = 4.5 V 200 Low-Side Switching Low On-Resistance 5 7 at VGS = 2.5 V 175 20 Low Threshold 0.9 V (typ.) 9 at VGS = 1.8 V 150 Fast Switching Speed 35 ns 10 at VGS = 1.5 V

 8.1. Size:170K  vishay
 si1032r.pdf

Si1032R/X Vishay Siliconix N-Channel 1.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 5 at VGS = 4.5 V 200 Low-Side Switching Low On-Resistance 5 7 at VGS = 2.5 V 175 20 Low Threshold 0.9 V (typ.) 9 at VGS = 1.8 V 150 Fast Switching Speed 35 ns 10 at VGS = 1.5 V

 8.2. Size:79K  vishay
 si1032r-x.pdf

Si1032R/X Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 1.5-V Rated 5 @ VGS = 4.5 V 200 7 @ VGS = 2.5 V 175 20 20 9 @ VGS = 1.8 V 150 10 @ VGS = 1.5 V 50 FEATURES BENEFITS APPLICATIONS D Low-Side Switching D Ease in Driving Switches D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories D Low On-Resistance 5 W D Low Offset (E

 9.1. Size:110K  vishay
 si1031r-x.pdf

Si1031R/X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 8 at VGS = - 4.5 V - 150 High-Side Switching Low On-Resistance 8 12 at VGS = - 2.5 V - 125 - 20 Low Threshold 0.9 V (typ.) 15 at VGS = - 1.8 V - 100 Fast Switching Speed 45 ns 20 a

 9.2. Size:132K  vishay
 si1031x.pdf

Si1031R/X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 8 at VGS = - 4.5 V - 150 High-Side Switching Low On-Resistance 8 12 at VGS = - 2.5 V - 125 - 20 Low Threshold 0.9 V (typ.) 15 at VGS = - 1.8 V - 100 Fast Switching Speed 45 ns 20 a

 9.3. Size:109K  vishay
 si1033x.pdf

Si1033X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 8 at VGS = - 4.5 V - 150 TrenchFET Power MOSFET 1.5 V Rated 12 at VGS = - 2.5 V - 125 High-Side Switching - 20 Low On-Resistance 8 15 at VGS = - 1.8 V - 100 Low Threshold 0.9 V (ty

 9.4. Size:109K  vishay
 si1034x.pdf

Si1034X Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 5 at VGS = 4.5 V 200 TrenchFET Power MOSFET 1.5 V Rated 7 at VGS = 2.5 V 175 Low-Side Switching 20 Low On-Resistance 5 9 at VGS = 1.8 V 150 Low Threshold 0.9 V (typ.) 10 at VGS = 1

 9.5. Size:108K  vishay
 si1037x.pdf

Si1037X Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.195 at VGS = - 4.5 V - 0.84 TrenchFET Power MOSFET 0.260 at VGS = - 2.5 V - 20 - 0.73 Low Threshold 0.350 at VGS = - 1.8 V - 0.64 Smallest LITTLE FOOT Package 1.6 mm x 1.6 mm Low 0.6

 9.6. Size:134K  vishay
 si1031r.pdf

Si1031R/X Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 8 at VGS = - 4.5 V - 150 High-Side Switching Low On-Resistance 8 12 at VGS = - 2.5 V - 125 - 20 Low Threshold 0.9 V (typ.) 15 at VGS = - 1.8 V - 100 Fast Switching Speed 45 ns 20 a

 9.7. Size:127K  vishay
 si1035x.pdf

Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (mA) Definition 5 at VGS = 4.5 V 200 TrenchFET Power MOSFET 1.5 V Rated 7 at VGS = 2.5 V 175 Very Small Footprint N-Channel 20 High-Side Switching 9 at VGS = 1.8 V 150 Low On-Resista

 9.8. Size:69K  vishay
 si1031r si1031x.pdf

Si1031R/X New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY 1.5-V Rated VDS (V) rDS(on) (W) ID (mA) 8 @ VGS = -4.5 V -150 12 @ VGS = -2.5 V -125 -20 -20 15 @ VGS = -1.8 V -100 20 @ VGS = -1.5 V -30 FEATURES BENEFITS APPLICATIONS D High-Side Switching D Ease in Driving Switches D Drivers Relays, Solenoids, Lamps, Hammers, Displays, Memories D Low On-Resi

 9.9. Size:147K  vishay
 si1034cx.pdf

Si1034CX Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) 100 % Rg Tested 0.396 at VGS = 4.5 V 0.5 Gate-Source ESD Protected 1000 V Material categorization 0.456 at VGS = 2.5 V 0.2 For definitions of compliance please see 20 0.75 0.546 at VGS = 1.8 V 0.2 www.vishay.com/do

 9.10. Size:110K  vishay
 si1039x.pdf

Si1039X Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.165 at VGS = - 4.5 V - 0.95 TrenchFET Power MOSFET 0.220 at VGS = - 2.5 V - 12 - 0.82 Low Threshold 0.280 at VGS = - 1.8 V - 0.67 Smallest LITTLE FOOT Package 1.6 mm x 1.6 mm Low 0.6

 9.11. Size:199K  vishay
 si1036x.pdf

Si1036X www.vishay.com Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) MAX. ID (A) Qg (TYP.) 100 % Rg tested 0.540 at VGS = 4.5 V 0.5 Gate-source ESD protected 1000 V 0.600 at VGS = 2.5 V 0.2 30 0.72 nC Material categorization 0.700 at VGS = 1.8 V 0.2 For definitions of compliance please s