SI1051X Todos los transistores

 

SI1051X MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI1051X

Código: 2*

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.236 W

Tensión drenaje-fuente (Vds): 8 V

Tensión compuerta-fuente (Vgs): 5 V

Corriente continua de drenaje (Id): 1.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Tiempo de elevación (tr): 36 nS

Conductancia de drenaje-sustrato (Cd): 180 pF

Resistencia drenaje-fuente RDS(on): 0.122 Ohm

Empaquetado / Estuche: SC-89

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SI1051X Datasheet (PDF)

1.1. si1051x.pdf Size:122K _vishay

SI1051X
SI1051X

Si1051X Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A)a Qg (Typ.) Definition 0.122 at VGS = - 4.5 V 1.2 • TrenchFET® Power MOSFET 0.141 at VGS = - 2.5 V 1.1 • 100 % Rg Tested - 8 5.91 0.168 at VGS = - 1.8 V 0.60 • Compliant to RoHS Directive 2002/95/EC 0.198 at VGS = - 1.5

5.1. si1054x.pdf Size:136K _vishay

SI1051X
SI1051X

Si1054X Vishay Siliconix N-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition 0.095 at VGS = 4.5 V 1.32 • TrenchFET® Power MOSFET 12 0.104 at VGS = 2.5 V 1.26 5.25 • 100 % Rg Tested 0.114 at VGS = 1.8 V 0.88 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Swi

5.2. si1056x.pdf Size:119K _vishay

SI1051X
SI1051X

Si1056X Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.) Definition 0.089 at VGS = 4.5 V 1.32 • TrenchFET® Power MOSFET • 100 % Rg Tested 0.098 at VGS = 2.5 V 1.26 20 5.2 • Compliant to RoHS Directive 2002/95/EC 0.121 at VGS = 1.8 V 1.13 APPLICATIONS • Load Swit

 5.3. si1058x.pdf Size:140K _vishay

SI1051X
SI1051X

Si1058X Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) ()ID (A) Qg (Typ.) • 100 % Rg and UIS Tested 0.091 at VGS = 4.5 V • Material categorization: 1.3a 20 3.5 For definitions of compliance please see 0.124 at VGS = 2.5 V 1.1 www.vishay.com/doc?99912 APPLICATIONS • Load Switch for Portable Devices

5.4. si1050x.pdf Size:121K _vishay

SI1051X
SI1051X

Si1050X Vishay Siliconix N-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.) Definition 0.086 at VGS = 4.5 V 1.34a • TrenchFET® Power MOSFET • 100 % Rg Tested 0.093 at VGS = 2.5 V 1.29 8 7.1 • Compliant to RoHS Directive 2002/95/EC 0.102 at VGS = 1.8 V 1.23 0.120 at VGS = 1.5 V

Otros transistores... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

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