SI1300BDL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Si1300BDLVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.85 at VGS = 4.5 V 0.4 TrenchFET Power MOSFET20 0.335 100 % Rg Tested1.08 at VGS = 2.5 V 0.35 Compliant to RoHS Directive 2002/95/ECSC-70 (3-LEADS) DG 1 Marking Code 3 D KE

Si1300DLNew ProductVishay SiliconixN-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)2.0 @ VGS = 4.5 V 25020202.5 @ VGS = 2.5 V 150SOT-323SC-70 (3-Leads)Marking CodeG 1KC XX3 DLot Traceabilityand Date CodeS 2Part # CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 20

Si1303DLVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.430 at VGS = - 4.5 V - 0.72 TrenchFET Power MOSFETs- 20 0.480 at VGS = - 3.6 V - 0.68 2.5 V Rated Compliant to RoHS Directive 2002/95/EC0.700 at VGS = - 2.5 V - 0.56SOT-323 SC-70 (3-LEADS) G 1

Si1303DLVishay SiliconixP-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.430 at VGS = - 4.5 V - 0.72 TrenchFET Power MOSFETs- 20 0.480 at VGS = - 3.6 V - 0.68 2.5 V Rated Compliant to RoHS Directive 2002/95/EC0.700 at VGS = - 2.5 V - 0.56SOT-323 SC-70 (3-LEADS) G 1

Si1307DLVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.290 at VGS = - 4.5 V 0.91 TrenchFET Power MOSFETs: 1.8 V Rated- 12 0.435 at VGS = - 2.5 V 0.74 Compliant to RoHS Directive 2002/95/EC0.580 at VGS = - 1.8 V 0.64SOT-323SC-70 (3-LEADS)G 1LC

Si1304DLVishay SiliconixN-Channel 25-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A) Qg (Typ)0.350 @ VGS = 4.5 V0.752525131.30.450 @ VGS = 2.5 V 0.66SOT-323SC-70 (3-LEADS)G 1Marking Code3D KB XXLot Traceabilityand Date CodeS 2Part # CodeTop ViewOrdering Information: Si1304DL-T1ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Pa

Si1307EDLVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.290 at VGS = - 4.5 V 0.91 ESD Protection: 3000 V- 12 0.435 at VGS = - 2.5 V 0.74 Compliant to RoHS Directive 2002/95/EC0.580 at VGS = - 1.8 V 0.64SOT-323SC-70 (3-LEADS)G 1Marking Code3

Si1303EDLNew ProductVishay SiliconixP-Channel 2.5-V (G-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.430 @ VGS = 4.5 V"0.7220200.480 @ VGS = 3.6 V "0.680.700 @ VGS = 2.5 V "0.56SOT-323SC-70 (3-LEADS)G 1Marking Code3D LD XXLot Traceabilityand Date CodeS 2Part # CodeTop ViewABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si1305EDLVishay SiliconixP-Channel 1.8 V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.280 at VGS = - 4.5 V 0.92 ESD Protection: 3000 V- 8 0.380 at VGS = - 2.5 V 0.79 Compliant to RoHS Directive 2002/95/EC0.530 at VGS = - 1.8 V 0.67SOT-323SC-70 (3-LEADS)G 1Marking Code3D

Si1305DLVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition TrenchFET Power MOSFET: 1.8 V0.280 at VGS = - 4.5 V - 0.92 Compliant to RoHS Directive 2002/95/EC0.380 at VGS = - 2.5 V - 0.79- 80.530 at VGS = - 1.8 V - 0.67SOT-323SC-70 (3-LEADS)G 1Marking Cod

Si1304BDLVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.270 at VGS = 4.5 V 0.90 TrenchFET Power MOSFET30 1.1 100 % Rg Tested0.385 at VGS = 2.5 V 0.75 Compliant to RoHS Directive 2002/95/ECSC-70 (3-LEADS)G 1DMarking Code3DKF XXL

Si1301DLNew ProductVishay SiliconixP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (mA)3.8 @ VGS = 4.5 V 18020205.0 @ VGS = 2.5 V 100SOT-323SC-70 (3-Leads)Marking CodeG 1LG XXLot Traceability3 Dand Date CodePart # CodeS 2ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Sourc

Si1302DLVishay SiliconixN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARY FEATURESVDS (V) RDS(on) ()ID (A) Halogen-free According to IEC 61249-2-21Definition0.480 at VGS = 10 V 0.6430 TrenchFET Power MOSFET0.700 at VGS = 4.5 V 0.53 Compliant to RoHS Directive 2002/95/ECSC-70 (3-LEADS)G 1Marking Code KA XX3DLot Traceability and Date Code S 2 Pa

New ProductSi1308EDLVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)c Qg (Typ.) 100 % Rg Tested0.132 at VGS = 10 V 1.5 Typical ESD Performance 1800 V30 0.144 at VGS = 4.5 V 1.4 1.4 nC Material categorization:For definitions of compliance please see0.185 at VGS = 2.5 V 1.3ww

ECO-PACTM 2IGBT Module PSIG 130/06 IC25 = 121 APSIS 130/06* VCES = 600 VPSSI 130/06* VCE(sat)typ.= 2.3 VPSI 130/06*Short Circuit SOA CapabilitySquare RBSOAPreliminary Data SheetX15AC 1OP 9IK 10L9NTCX13L9E2E2T16GH 10 NTCX15X16X15K10X16 L9NTCVX 18F1IK 10AC 1X16PSI 130/06*PSIS 130/06*PSSI 130/06**NTC optionalIGBTsLMN S A IJK

ECO-PACTM 2IGBT Module PSIG 130/06 IC25 = 121 APSIS 130/06* VCES = 600 VPSSI 130/06* VCE(sat)typ.= 2.3 VPSI 130/06*Short Circuit SOA CapabilitySquare RBSOAPreliminary Data SheetX15AC 1OP 9IK 10L9NTCX13L9E2E2T16GH 10 NTCX15X16X15K10X16 L9NTCVX 18F1IK 10AC 1X16PSI 130/06*PSIS 130/06*PSSI 130/06**NTC optionalIGBTsLMN S A IJK

SI1304BDLwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC