IRFR9020 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFR9020
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 42 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 9.4 nC
   trⓘ - Tiempo de subida: 57 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
   Paquete / Cubierta: TO252

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IRFR9020 Datasheet (PDF)

..1. Size:233K international rectifier
irfr9020 irfr9022 irfu9020 irfu9022.pdf

Document Number: 90350 www.vishay.comC-65Document Number: 90350 www.vishay.comC-66Document Number: 90350 www.vishay.comC-67Document Number: 90350 www.vishay.comC-68Document Number: 90350 www.vishay.comC-69Document Number: 90350 www.vishay.comC-70Document Number: 90350 www.vishay.comC-71Document Number: 90350 www.vishay.comC-72Legal Disclaimer NoticeVish

..2. Size:353K vishay
irfr9020pbf irfu9020pbf sihfr9020 sihfu9020.pdf

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020www.vishay.comVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Surface Mountable (Order As IRFR9020,VDS (V) - 50 SiHFR9020) Straight Lead Option (Order As IRFU9020,RDS(on) ()VGS = - 10 V 0.28SiHFU9020)Qg (Max.) (nC) 14 Repetitive Avalanche Ratings Qgs (nC) 6.5 Dynamic dV/dt Rating Simple Drive Requirements

..3. Size:1570K vishay
irfr9020 irfu9020 sihfr9020 sihfu9020.pdf

IRFR9020, IRFU9020, SiHFR9020, SiHFU9020Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 50DefinitionRDS(on) ()VGS = - 10 V 0.28 Surface Mountable (Order As IRFR9020,Qg (Max.) (nC) 14SiHFR9020)Qgs (nC) 6.5 Straight Lead Option (Order As IRFU9020,SiHFU9020)Qgd (nC) 6.5 Repetitive Avalanche Ratings

7.1. Size:1347K 1
irfr9024ncpbf irfu9024ncpbf.pdf

PD - 96048IRFR9024NCPbFIRFU9024NCPbF(IRFR9024NCPbF)(IRFU9024NCPbF) Lead-Freewww.irf.com 105/31/06IRFR/U9024NCPbF2 www.irf.comIRFR/U9024NCPbFwww.irf.com 3IRFR/U9024NCPbF4 www.irf.comIRFR/U9024NCPbFwww.irf.com 5IRFR/U9024NCPbF6 www.irf.comIRFR/U9024NCPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductanc

7.2. Size:1384K international rectifier
irfr9024npbf irfu9024npbf.pdf

PD - 95015AIRFR9024NPbFIRFU9024NPbF Lead-Freewww.irf.com 112/14/04IRFR/U9024NPbF2 www.irf.comIRFR/U9024NPbFwww.irf.com 3IRFR/U9024NPbF4 www.irf.comIRFR/U9024NPbFwww.irf.com 5IRFR/U9024NPbF6 www.irf.comIRFR/U9024NPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage In

7.3. Size:1175K international rectifier
irfr9024pbf.pdf

PD- 95732AIRFR9024PbFIRFU9024PbF Lead-Freewww.irf.com 11/10/05IRFR/U9024PbF2 www.irf.comIRFR/U9024PbFwww.irf.com 3IRFR/U9024PbF4 www.irf.comIRFR/U9024PbFwww.irf.com 5IRFR/U9024PbF6 www.irf.comIRFR/U9024PbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance

7.4. Size:1201K international rectifier
irfr9024pbf irfu9024pbf.pdf

PD- 95732AIRFR9024PbFIRFU9024PbF Lead-Free1/10/05Document Number: 91278 www.vishay.com1IRFR/U9024PbFDocument Number: 91278 www.vishay.com2IRFR/U9024PbFDocument Number: 91278 www.vishay.com3IRFR/U9024PbFDocument Number: 91278 www.vishay.com4IRFR/U9024PbFDocument Number: 91278 www.vishay.com5IRFR/U9024PbFDocument Number: 91278 www.vishay.com6IR

7.5. Size:117K international rectifier
irfr9024n.pdf

PD - 9.1506IRFR/U9024NPRELIMINARYHEXFET Power MOSFET Ultra Low On-ResistanceD P-ChannelVDSS = -55V Surface Mount (IRFR9024N) Straight Lead (IRFU9024N)RDS(on) = 0.175 Advanced Process TechnologyG Fast SwitchingID = -11A Fully Avalanche RatedSDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieve

7.6. Size:173K international rectifier
irfr9024.pdf

7.7. Size:1968K vishay
irfr9024 irfu9024 sihfr9024 sihfu9024.pdf

IRFR9024, IRFU9024, SiHFR9024, SiHFU9024Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 60 Repetitive Avalanche RatedAvailableRDS(on) ()VGS = - 10 V 0.28 Surface Mount (IRFR9024/SiHFR9024)RoHS*COMPLIANTQg (Max.) (nC) 19 Straight Lead (IRFU9024/SiHFU9024)Qgs (nC) 5.4 Available in Tape and ReelQgd (nC) 11 P

7.8. Size:1384K infineon
irfr9024npbf irfu9024npbf.pdf

7.9. Size:529K infineon
auirfr9024n auirfu9024n.pdf

AUIRFR9024N AUTOMOTIVE GRADE AUIRFU9024N Features HEXFET Power MOSFET Advanced Planar Technology VDSS -55V Low On-Resistance P-Channel RDS(on) max. 0.175 Dynamic dv/dt Rating ID -11A 150C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax D D Lead-Free, RoHS Complian

7.10. Size:870K cn vbsemi
irfr9024ntrpbf.pdf

IRFR9024NTRPBFwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParamete

7.11. Size:830K cn vbsemi
irfr9024tr.pdf

IRFR9024TRwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ) 100 % UIS Tested0.061 at VGS = - 10 V - 30APPLICATIONS- 60 100.072 at VGS = - 4.5 V - 26 Load SwitchSTO-252GG D STop ViewDP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter Sy

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