SI1305EDL MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI1305EDL
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 0.29 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 8 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua
de drenaje: 0.86 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 431 nS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Encapsulados: SOT-323
Búsqueda de reemplazo de SI1305EDL MOSFET
- Selecciónⓘ de transistores por parámetros
SI1305EDL datasheet
..1. Size:100K vishay
si1305edl.pdf 
Si1305EDL Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.280 at VGS = - 4.5 V 0.92 ESD Protection 3000 V - 8 0.380 at VGS = - 2.5 V 0.79 Compliant to RoHS Directive 2002/95/EC 0.530 at VGS = - 1.8 V 0.67 SOT-323 SC-70 (3-LEADS) G 1 Marking Code 3 D
8.1. Size:222K vishay
si1305dl.pdf
Si1305DL Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition TrenchFET Power MOSFET 1.8 V 0.280 at VGS = - 4.5 V - 0.92 Compliant to RoHS Directive 2002/95/EC 0.380 at VGS = - 2.5 V - 0.79 - 8 0.530 at VGS = - 1.8 V - 0.67 SOT-323 SC-70 (3-LEADS) G 1 Marking Cod
9.1. Size:104K 1
si1303dl.pdf
Si1303DL Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.430 at VGS = - 4.5 V - 0.72 TrenchFET Power MOSFETs - 20 0.480 at VGS = - 3.6 V - 0.68 2.5 V Rated Compliant to RoHS Directive 2002/95/EC 0.700 at VGS = - 2.5 V - 0.56 SOT-323 SC-70 (3-LEADS) G 1
9.2. Size:61K vishay
si1300dl.pdf
Si1300DL New Product Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 2.0 @ VGS = 4.5 V 250 20 20 2.5 @ VGS = 2.5 V 150 SOT-323 SC-70 (3-Leads) Marking Code G 1 KC XX 3 D Lot Traceability and Date Code S 2 Part # Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20
9.3. Size:221K vishay
si1303dl.pdf
Si1303DL Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.430 at VGS = - 4.5 V - 0.72 TrenchFET Power MOSFETs - 20 0.480 at VGS = - 3.6 V - 0.68 2.5 V Rated Compliant to RoHS Directive 2002/95/EC 0.700 at VGS = - 2.5 V - 0.56 SOT-323 SC-70 (3-LEADS) G 1
9.4. Size:95K vishay
si1307dl.pdf
Si1307DL Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.290 at VGS = - 4.5 V 0.91 TrenchFET Power MOSFETs 1.8 V Rated - 12 0.435 at VGS = - 2.5 V 0.74 Compliant to RoHS Directive 2002/95/EC 0.580 at VGS = - 1.8 V 0.64 SOT-323 SC-70 (3-LEADS) G 1 LC
9.5. Size:224K vishay
si1300bdl.pdf
Si1300BDL Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.85 at VGS = 4.5 V 0.4 TrenchFET Power MOSFET 20 0.335 100 % Rg Tested 1.08 at VGS = 2.5 V 0.35 Compliant to RoHS Directive 2002/95/EC SC-70 (3-LEADS) D G 1 Marking Code 3 D KE
9.6. Size:65K vishay
si1304dl.pdf
Si1304DL Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg (Typ) 0.350 @ VGS = 4.5 V 0.75 25 25 13 1.3 0.450 @ VGS = 2.5 V 0.66 SOT-323 SC-70 (3-LEADS) G 1 Marking Code 3 D KB XX Lot Traceability and Date Code S 2 Part # Code Top View Ordering Information Si1304DL-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Pa
9.7. Size:100K vishay
si1307edl.pdf
Si1307EDL Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.290 at VGS = - 4.5 V 0.91 ESD Protection 3000 V - 12 0.435 at VGS = - 2.5 V 0.74 Compliant to RoHS Directive 2002/95/EC 0.580 at VGS = - 1.8 V 0.64 SOT-323 SC-70 (3-LEADS) G 1 Marking Code 3
9.8. Size:72K vishay
si1303edl.pdf
Si1303EDL New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.430 @ VGS = 4.5 V "0.72 20 20 0.480 @ VGS = 3.6 V "0.68 0.700 @ VGS = 2.5 V "0.56 SOT-323 SC-70 (3-LEADS) G 1 Marking Code 3 D LD XX Lot Traceability and Date Code S 2 Part # Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
9.9. Size:222K vishay
si1304bdl.pdf
Si1304BDL Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.270 at VGS = 4.5 V 0.90 TrenchFET Power MOSFET 30 1.1 100 % Rg Tested 0.385 at VGS = 2.5 V 0.75 Compliant to RoHS Directive 2002/95/EC SC-70 (3-LEADS) G 1 D Marking Code 3 D KF XX L
9.10. Size:44K vishay
si1301dl.pdf
Si1301DL New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (mA) 3.8 @ VGS = 4.5 V 180 20 20 5.0 @ VGS = 2.5 V 100 SOT-323 SC-70 (3-Leads) Marking Code G 1 LG XX Lot Traceability 3 D and Date Code Part # Code S 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Sourc
9.11. Size:212K vishay
si1302dl.pdf
Si1302DL Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) RDS(on) ( )ID (A) Halogen-free According to IEC 61249-2-21 Definition 0.480 at VGS = 10 V 0.64 30 TrenchFET Power MOSFET 0.700 at VGS = 4.5 V 0.53 Compliant to RoHS Directive 2002/95/EC SC-70 (3-LEADS) G 1 Marking Code KA XX 3 D Lot Traceability and Date Code S 2 Pa
9.12. Size:245K vishay
si1308edl.pdf
New Product Si1308EDL Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A)c Qg (Typ.) 100 % Rg Tested 0.132 at VGS = 10 V 1.5 Typical ESD Performance 1800 V 30 0.144 at VGS = 4.5 V 1.4 1.4 nC Material categorization For definitions of compliance please see 0.185 at VGS = 2.5 V 1.3 ww
9.13. Size:170K powersem
psi130-06.pdf
ECO-PACTM 2 IGBT Module PSIG 130/06 IC25 = 121 A PSIS 130/06* VCES = 600 V PSSI 130/06* VCE(sat)typ.= 2.3 V PSI 130/06* Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet X15 AC 1 OP 9 IK 10 L9 NTC X13 L9 E2 E2 T16 GH 10 NTC X15 X16 X15 K10 X16 L9 NTC VX 18 F1 IK 10 AC 1 X16 PSI 130/06* PSIS 130/06* PSSI 130/06* *NTC optional IGBTs LMN S A IJK
9.14. Size:170K powersem
pssi130-06.pdf
ECO-PACTM 2 IGBT Module PSIG 130/06 IC25 = 121 A PSIS 130/06* VCES = 600 V PSSI 130/06* VCE(sat)typ.= 2.3 V PSI 130/06* Short Circuit SOA Capability Square RBSOA Preliminary Data Sheet X15 AC 1 OP 9 IK 10 L9 NTC X13 L9 E2 E2 T16 GH 10 NTC X15 X16 X15 K10 X16 L9 NTC VX 18 F1 IK 10 AC 1 X16 PSI 130/06* PSIS 130/06* PSSI 130/06* *NTC optional IGBTs LMN S A IJK
9.15. Size:1476K cn vbsemi
si1304bdl.pdf
SI1304BDL www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.036 at VGS = 10 V 4 TrenchFET Power MOSFET 20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM 0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC
Otros transistores... SI1073X
, SI1077X
, SI1079X
, SI1300BDL
, SI1302DL
, SI1303DL
, SI1304BDL
, SI1305DL
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, SI1315DL
, SI1317DL
, SI1330EDL
, SI1400DL
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