SI1411DH Todos los transistores

 ..1. Size:101K  vishay
 si1411dh.pdf

Si1411DH Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 2.6 at VGS = - 10 V - 0.52 TrenchFET Power MOSFETS - 150 4.2 nC 2.7 at VGS = - 6 V - 0.51 Small, Thermally Enhanced SC-70 Package Ultra Low On-Resistance Compliant to RoHS Directive 200

 9.1. Size:225K  vishay
 si1414dh.pdf

New Product Si1414DH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.046 at VGS = 4.5 V TrenchFET Power MOSFET 4 100 % Rg Tested 0.050 at VGS = 2.5 V 30 4 5.7 nC Compliant to RoHS Directive 2002/95/EC 0.057 at VGS = 1.8 V 4 APPLICATIONS

 9.2. Size:236K  vishay
 si1410edh.pdf

Si1410EDH Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.070 at VGS = 4.5 V 3.7 TrenchFET Power MOSFETs 1.8 V Rated 20 0.080 at VGS = 2.5 V 3.4 ESD Protected 2000 V Thermally Enhanced SC-70 Package 0.100 at VGS = 1.8 V 3.0 Compliant to RoHS Direc

 9.3. Size:236K  vishay
 si1413dh.pdf

Si1413DH Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.115 at VGS = - 4.5 V - 2.9 TrenchFET Power MOSFETs 1.8 V Rated 0.155 at VGS = - 2.5 V - 20 - 2.4 Thermally Enhanced SC-70 Package 0.220 at VGS = - 1.8 V - 2.0 Compliant to RoHS Directive 2002/9

 9.4. Size:237K  vishay
 si1413edh.pdf

Si1413EDH Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.115 at VGS = - 4.5 V - 2.9 TrenchFET Power MOSFET 1.8 V Rated ESD Protected 3000 V - 20 0.155 at VGS = - 2.5 V - 2.4 Thermally Enhanced SC-70 Package 0.220 at VGS = - 1.8 V - 2.0 Compliant to

 9.5. Size:258K  vishay
 si1416edh.pdf

New Product Si1416EDH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.058 at VGS = 10 V 3.9 TrenchFET Power MOSFET 30 0.064 at VGS = 4.5 V 3.9 3.5 nC Typical ESD Protection 1500 V in HBM 0.077 at VGS = 2.5 V 3.9 100 % Rg Tested Compliant to

 9.6. Size:100K  vishay
 si1419dh.pdf

Si1419DH Vishay Siliconix P-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 5.0 at VGS = - 10 V - 0.38 TrenchFET Power MOSFETS - 200 4.1 5.1 at VGS = - 6 V - 0.37 Small, Thermally Enhanced SC-70 Package Ultra Low On-Resistance Compliant to RoHS Directive 2002/9

 9.7. Size:76K  vishay
 si1417dh.pdf

New Product Si1417DH Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS 1.8 V Rated VDS (V) rDS(on) ( )ID (A) Pb-free Thermally Enhanced SC-70 Package 0.085 at VGS = - 4.5 V - 3.3 Available 0.115 at VGS = - 2.5 V - 12 - 2.9 RoHS* APPLICATIONS COMPLIANT 0.160 at VGS = - 1.8 V - 2.4 Load Switching PA Switc

 9.8. Size:237K  vishay
 si1417edh.pdf

Si1417EDH Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.085 at VGS = - 4.5 V - 3.3 TrenchFET Power MOSFET 1.8 V Rated ESD Protected 3000 V - 12 0.115 at VGS = - 2.5 V - 2.9 Thermally Enhanced SC-70 Package 0.160 at VGS = - 1.8 V - 2.4 Compliant to