SI1414DH Todos los transistores

 

SI1414DH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI1414DH

Código: AP*

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.56 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1 V

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 60 pF

Resistencia drenaje-fuente RDS(on): 0.046 Ohm

Empaquetado / Estuche: SOT-363

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SI1414DH Datasheet (PDF)

1.1. si1414dh.pdf Size:225K _vishay

SI1414DH
SI1414DH

New Product Si1414DH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () ID (A)a Qg (Typ.) Definition 0.046 at VGS = 4.5 V • TrenchFET® Power MOSFET 4 • 100 % Rg Tested 0.050 at VGS = 2.5 V 30 4 5.7 nC • Compliant to RoHS Directive 2002/95/EC 0.057 at VGS = 1.8 V 4 APPLICATIONS

5.1. si1410edh.pdf Size:236K _vishay

SI1414DH
SI1414DH

Si1410EDH Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.070 at VGS = 4.5 V 3.7 • TrenchFET® Power MOSFETs: 1.8 V Rated 20 0.080 at VGS = 2.5 V 3.4 • ESD Protected: 2000 V • Thermally Enhanced SC-70 Package 0.100 at VGS = 1.8 V 3.0 • Compliant to RoHS Direc

5.2. si1413dh.pdf Size:236K _vishay

SI1414DH
SI1414DH

Si1413DH Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.115 at VGS = - 4.5 V - 2.9 • TrenchFET® Power MOSFETs: 1.8 V Rated 0.155 at VGS = - 2.5 V - 20 - 2.4 • Thermally Enhanced SC-70 Package 0.220 at VGS = - 1.8 V - 2.0 • Compliant to RoHS Directive 2002/9

 5.3. si1413edh.pdf Size:237K _vishay

SI1414DH
SI1414DH

Si1413EDH Vishay Siliconix P-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.115 at VGS = - 4.5 V - 2.9 • TrenchFET® Power MOSFET: 1.8 V Rated • ESD Protected: 3000 V - 20 0.155 at VGS = - 2.5 V - 2.4 • Thermally Enhanced SC-70 Package 0.220 at VGS = - 1.8 V - 2.0 • Compliant to

5.4. si1417edh.pdf Size:237K _vishay

SI1414DH
SI1414DH

Si1417EDH Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.085 at VGS = - 4.5 V - 3.3 • TrenchFET® Power MOSFET: 1.8 V Rated • ESD Protected: 3000 V - 12 0.115 at VGS = - 2.5 V - 2.9 • Thermally Enhanced SC-70 Package 0.160 at VGS = - 1.8 V - 2.4 • Compliant to

 5.5. si1416edh.pdf Size:258K _vishay

SI1414DH
SI1414DH

New Product Si1416EDH Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A)a Qg (Typ.) Definition 0.058 at VGS = 10 V 3.9 • TrenchFET® Power MOSFET 30 0.064 at VGS = 4.5 V 3.9 3.5 nC • Typical ESD Protection 1500 V in HBM 0.077 at VGS = 2.5 V 3.9 • 100 % Rg Tested • Compliant to

5.6. si1411dh.pdf Size:101K _vishay

SI1414DH
SI1414DH

Si1411DH Vishay Siliconix P-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Definition 2.6 at VGS = - 10 V - 0.52 • TrenchFET® Power MOSFETS - 150 4.2 nC 2.7 at VGS = - 6 V - 0.51 • Small, Thermally Enhanced SC-70 Package • Ultra Low On-Resistance • Compliant to RoHS Directive 200

5.7. si1417dh.pdf Size:76K _vishay

SI1414DH
SI1414DH

New Product Si1417DH Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS: 1.8 V Rated VDS (V) rDS(on) (?)ID (A) Pb-free Thermally Enhanced SC-70 Package 0.085 at VGS = - 4.5 V - 3.3 Available 0.115 at VGS = - 2.5 V - 12 - 2.9 RoHS* APPLICATIONS COMPLIANT 0.160 at VGS = - 1.8 V - 2.4 Load Switching PA Switch Level S

5.8. si1419dh.pdf Size:100K _vishay

SI1414DH
SI1414DH

Si1419DH Vishay Siliconix P-Channel 200 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Definition 5.0 at VGS = - 10 V - 0.38 • TrenchFET® Power MOSFETS - 200 4.1 5.1 at VGS = - 6 V - 0.37 • Small, Thermally Enhanced SC-70 Package • Ultra Low On-Resistance • Compliant to RoHS Directive 2002/9

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