SI2302ADS Todos los transistores

 ..1. Size:199K  vishay
 si2302ads-t1 si2302ads.pdf

Si2302ADS Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.060 at VGS = 4.5 V 2.4 100 % Rg Tested 20 Compliant to RoHS Directive 2002/95/EC 0.115 at VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking Code Ordering Informatio

 0.1. Size:907K  cn vbsemi
 si2302ads-t1.pdf

SI2302ADS-T1 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC C

 6.1. Size:204K  vishay
 si2302ad.pdf

Si2302ADS Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.060 at VGS = 4.5 V 2.4 Compliant to RoHS Directive 2002/95/EC 20 0.115 at VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking Code Ordering Information Si2302ADS-T1-E3 (

 7.1. Size:853K  mcc
 si2302a.pdf

SI2302A Features Rugged and Reliable Lead Free Product is Acquired High Dense Cell Design for Extremely Low RDS(ON) N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Enhancement Mode Halogen Free Available Upon Request by Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Field Effect Transistor

 7.2. Size:2025K  shenzhen
 si2302a.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2302A N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.040 @ VGS = 4.5 V 3.0 20 20 0.060 @ V 2.0 GS = 2.5 V (SOT-23) G 1 3 D S 2 Top View (A2)* SI2302A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Source Voltage VG

 7.3. Size:1718K  umw-ic
 si2302a.pdf

R UMW UMW SI2302A UMW SI2302A UMW SI2302A N-Channel Enhancement MOSFET Features SOT 23 VDS=20V RDS(on)= 85m @VGS=4.5V ,ID=3.6A RDS(on)= 115m @VGS=2.5V ,ID=3.1A Marking 1. GATE 2. SOURCE G 1 3. DRAIN 3 D S 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 Ta=25 2.

 7.4. Size:303K  msksemi
 si2302ai-ms.pdf

www.msksemi.com SI2302AI-MS Semiconductor Compiance General Features V = 20V,I = 3 A DS D R

 7.5. Size:705K  cn szxunrui
 si2302a.pdf

SOT-23 Plastic-Encapsulate MOSFETS SI2302A N-Channel 20-V(D-S) MOSFET SI2302A V(BR)DSS RDS(on)MAX ID SOT-23 0.040 @ 4.5V 3 20V 3A 1.GATE 0.050 @ 2.5V 2.SOURCE 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET Lead free product is acquired Equivalent Circuit MARKING Surface mount package A2 w APPLICATION Load Switch for Portable Devices DC/DC Converter *