SI2302-TP Todos los transistores

 ..1. Size:270K  vishay
 si2302-tp.pdf

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI2302 Phone (818) 701-4933 Fax (818) 701-4939 Features N-Channel 20V,3.0A, RDS(ON)=55m @VGS=4.5V RDS(ON)=82m @VGS=2.5V Enhancement Mode High dense cell design for extremely low RDS(ON) Rugged and reliable Field Effect Transistor Lead free product is acqu

 8.1. Size:257K  philips
 si2302ds.pdf

SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 20 November 2001 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability SI2302DS in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount packa

 8.2. Size:209K  vishay
 si2302cds.pdf

Si2302CDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Material categorization 0.057 at VGS = 4.5 V 2.9 For definitions of compliance please see 20 3.5 0.075 at VGS = 2.5 V www.vishay.com/doc?99912 2.6 APPLICATIONS Load Switching for Portable Devices DC/DC Converter TO

 8.3. Size:204K  vishay
 si2302dds.pdf

Si2302DDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition 0.057 at VGS = 4.5 V 2.9 TrenchFET Power MOSFET 20 3.5 0.075 at VGS = 2.5 V 100 % Rg Tested 2.6 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switching for Portable Dev

 8.4. Size:64K  vishay
 si2302ds.pdf

Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 20 20 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Source Voltage VGS "8 TA= 25_

 8.5. Size:204K  vishay
 si2302ad.pdf

Si2302ADS Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.060 at VGS = 4.5 V 2.4 Compliant to RoHS Directive 2002/95/EC 20 0.115 at VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking Code Ordering Information Si2302ADS-T1-E3 (

 8.6. Size:209K  vishay
 si2302cd.pdf

Si2302CDS Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Qg (Typ.) TrenchFET Power MOSFET 0.057 at VGS = 4.5 V 2.9 20 3.5 RoHS 0.075 at VGS = 2.5 V APPLICATIONS 2.6 COMPLIANT Load Switching for Portable Devices DC/DC Converter TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302

 8.7. Size:199K  vishay
 si2302ads-t1 si2302ads.pdf

Si2302ADS Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.060 at VGS = 4.5 V 2.4 100 % Rg Tested 20 Compliant to RoHS Directive 2002/95/EC 0.115 at VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking Code Ordering Informatio

 8.8. Size:260K  mcc
 si2302.pdf

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI2302 Phone (818) 701-4933 Fax (818) 701-4939 Features N-Channel 20V,3.0A, RDS(ON)=55m @VGS=4.5V RDS(ON)=82m @VGS=2.5V Enhancement Mode High dense cell design for extremely low RDS(ON) Rugged and reliable Field Effect Transistor Lead free product is acqu

 8.9. Size:853K  mcc
 si2302a.pdf

SI2302A Features Rugged and Reliable Lead Free Product is Acquired High Dense Cell Design for Extremely Low RDS(ON) N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Enhancement Mode Halogen Free Available Upon Request by Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Field Effect Transistor

 8.10. Size:4060K  htsemi
 si2302.pdf

SI2302 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S Millimeter Millimeter REF. REF. SOT-23 Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.4

 8.11. Size:2025K  shenzhen
 si2302a.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2302A N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.040 @ VGS = 4.5 V 3.0 20 20 0.060 @ V 2.0 GS = 2.5 V (SOT-23) G 1 3 D S 2 Top View (A2)* SI2302A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Source Voltage VG

 8.12. Size:1928K  shenzhen
 si2302 a2shb.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2302 N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.0 20 20 0.090 @ V 2.0 GS = 2.5 V (SOT-23-3L) (SOT-23) G 1 3 D S 2 Top View SI2302 (A2sHB)* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Sou

 8.13. Size:873K  blue-rocket-elect
 si2302.pdf

SI2302 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON) Super high dense cell design for low RDS(ON),SOT-23 package. / Applications

 8.14. Size:1560K  kexin
 si2302 ki2302.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET SI2302 (KI2302) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS=20V RDS(on)= 85m @VGS=4.5V ,ID=3.6A RDS(on)= 115m @VGS=2.5V ,ID=3.1A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dr

 8.15. Size:1471K  kexin
 si2302ds-3.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET SI2302DS (KI2302DS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS=20V RDS(on)= 85m @VGS=4.5V ,ID=3.6A RDS(on)= 115m @VGS=2.5V ,ID=3.1A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un

 8.16. Size:1142K  kexin
 si2302ds.pdf

SMD Type MOSFET N-Channel Enhancement MOSFET SI2302DS (KI2302DS) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 Features 3 VDS=20V RDS(on)= 85m @VGS=4.5V ,ID=3.6A RDS(on)= 115m @VGS=2.5V ,ID=3.1A 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Dr

 8.17. Size:1718K  umw-ic
 si2302a.pdf

R UMW UMW SI2302A UMW SI2302A UMW SI2302A N-Channel Enhancement MOSFET Features SOT 23 VDS=20V RDS(on)= 85m @VGS=4.5V ,ID=3.6A RDS(on)= 115m @VGS=2.5V ,ID=3.1A Marking 1. GATE 2. SOURCE G 1 3. DRAIN 3 D S 2 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 8 Ta=25 2.

 8.18. Size:710K  umw-ic
 si2302b.pdf

R UMW UMW SI2302B UMW SI2302B UMW SI2302B SOT-23 Plastic-Encapsulate MOSFETS N-Channel 20-V(D-S) MOSFET UMW SI2302B SOT 23 ID V(BR)DSS RDS(on)MAX 80 m @4.5V 20V 2.5A 100m @2.5V 1. GATE 2. SOURCE 3. DRAIN FEA TURE APPLICATION Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit A2SHB Maximum rating

 8.19. Size:1627K  born
 si2302s.pdf

SI2302S MOSFET ROHS N-Channel Enhancement-Mode MOSFET SOT-23 - Features Low RDS(on) @VGS=4.5V 3.3V Logic Level Control N Channel SOT23 Package Pb-Free, RoHS Compliant Applications V R Typ I Max (BR)DSS DS(ON) D Load Switch for DC/DC Converter 48m @ 4.5V Switching Circuits 20V 3 A 55m @ 3.3V LED Driver Order Information Mar

 8.20. Size:7031K  born
 si2302.pdf

SI2302 MOSFET ROHS N-Channel Enhancement-Mode MOSFET SOT-23 - Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS 10 Continuous

 8.21. Size:265K  guangdong hottech
 si2302.pdf

Plastic-Encapsulate Mosfets FEATURES SI2302 High dense cell design for extremely low RDS(ON) N-Channel MOSFET Rugged and reliable Case Material Molded Plastic. Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-source Voltage VGS 8 V 1.Gate 2.Source Drain Current (Continuous) ID 2.1 A SOT-23 3.Drain a Drai

 8.22. Size:1248K  mdd
 si2302s.pdf

SI2302S SOT-23 Plastic-Encapsulate MOSFETS 20V N-Channel Enhancement Mode MOSFET SOT-23 VDS= 20V 3 RDS(ON), Vgs@ 4.5V, Ids@ 2.3A 4 8m RDS(ON), Vgs@ 3.3V, Ids@ 2.3A 5 5m 1. GATE 2. SOURCE 1 3. DRAIN 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Equivalent circuit MARKING D A2sHB G S PACKAGE SPE

 8.23. Size:2126K  mdd
 si2302.pdf

SI2302 SOT-23 Plastic-Encapsulate MOSFETS 20V N-Channel Enhancement Mode MOSFET SOT-23 ID Max V(BR)DSS RDS(on)Typ 3 28m @ 4.5V 3.0A 20V 1. GATE 32m @ 3.3V 2. SOURCE 1 3. DRAIN 2 Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Equivalent circuit MARKING D A2sHB G S PACKAGE SPECIFICATIONS Reel DIA. Q'TY/Ree

 8.24. Size:303K  msksemi
 si2302ai-ms.pdf

www.msksemi.com SI2302AI-MS Semiconductor Compiance General Features V = 20V,I = 3 A DS D R

 8.25. Size:678K  cn szxunrui
 si2302.pdf

SOT-23 Plastic-Encapsulate MOSFETS SI2302 SI2302 N-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.045 @ 4.5V 3 20V 3A 1.GATE 0.055 @ 2.5V 2.SOURCE 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET Lead free product is acquired MARKING Equivalent Circuit Surface mount package A2sHB w APPLICATION Load Switch for Portable Devices DC/DC Converter *

 8.26. Size:705K  cn szxunrui
 si2302a.pdf

SOT-23 Plastic-Encapsulate MOSFETS SI2302A N-Channel 20-V(D-S) MOSFET SI2302A V(BR)DSS RDS(on)MAX ID SOT-23 0.040 @ 4.5V 3 20V 3A 1.GATE 0.050 @ 2.5V 2.SOURCE 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET Lead free product is acquired Equivalent Circuit MARKING Surface mount package A2 w APPLICATION Load Switch for Portable Devices DC/DC Converter *

 8.27. Size:705K  cn puolop
 si2302.pdf

SI2302 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 4A 45m RDS(ON), Vgs@ 2.5V, Ids@ 3.5A 59m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23 G S Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.80 3.00 G 1.80 2.00 B 2.30 2.50 H 0.90 1.1 C 1.20 1.4

 8.28. Size:2443K  cn yongyutai
 si2302.pdf

SI2302 N-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID SOT-23 0.050 @ 4.5V 3 20V 3A 1.GATE 0.065 @ 2.5V 2.SOURCE 3.DRAIN 1 2 General FEATURE TrenchFET Power MOSFET Lead free product is acquired MARKING Equivalent Circuit Surface mount package A2Shb APPLICATION Load Switch for Portable Devices DC/DC Converter Maximum ratings (Ta=25 unless otherwise not

 8.29. Size:1296K  cn alj
 si2302.pdf

SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD. SOT-23 Plastic-Encapsulate MOSFETS SI2302 N-Channel 20V(D-S) MOSFET Features V = 20V, I = 2.5A DS D R

 8.30. Size:1004K  cn twgmc
 si2302.pdf

SI2305 SI2301 SI2302 SI2302 SI2302 SI2302 SI2302 SI2301 Equivalent Circuit MARKING 3400 R A2SHB 3400 1.GATE 2.SOURCE 3.DRAIN

 8.31. Size:876K  cn vbsemi
 si2302ds-t1-ge3.pdf

SI2302DS-T1-GE3 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/D

 8.32. Size:907K  cn vbsemi
 si2302ads-t1.pdf

SI2302ADS-T1 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC C

 8.33. Size:876K  cn vbsemi
 si2302cds-t1-ge3.pdf

SI2302CDS-T1-GE3 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/

 8.34. Size:4059K  cn tech public
 si2302.pdf