SI2303CDS MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SI2303CDS
Código: N3
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 1.9 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 2.7 nC
Tiempo de subida (tr): 11 nS
Conductancia de drenaje-sustrato (Cd): 35 pF
Resistencia entre drenaje y fuente RDS(on): 0.19 Ohm
Paquete / Cubierta: SOT-23
Búsqueda de reemplazo de MOSFET SI2303CDS
SI2303CDS Datasheet (PDF)
si2303cds.pdf
Si2303CDSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.190 at VGS = - 10 V - 2.7 TrenchFET Power MOSFET- 30 2 nC 100 % Rg Tested0.330 at VGS = - 4.5 V - 2.1 100 % UIS TestedAPPLICATIONS Load SwitchTO-236(SOT-23)G 1 3 D
si2303cd.pdf
Si2303CDSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.190 at VGS = - 10 V - 2.7 TrenchFET Power MOSFET- 30 2 nC 100 % Rg Tested0.330 at VGS = - 4.5 V - 2.1 100 % UIS TestedAPPLICATIONS Load SwitchTO-236(SOT-23)G 1 3 D
si2303ds.pdf
Si2303DSVishay SiliconixP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.240 @ VGS = 10 V 1.730300.460 @ VGS = 4.5 V 1.3 TO-236(SOT-23)G 13 DS 2Top ViewSi2303DS (A3)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 30VVGate-Source Volta
si2303bds.pdf
Si2303BDSVishay SiliconixP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)bPb-free0.200 at VGS = - 10 V Available- 1.64- 300.380 at VGS = - 4.5 V RoHS*- 1.0COMPLIANTTO-236(SOT-23)G 13 DS 2Top ViewSi2303BDS (L3)** Marking CodeOrdering Information: Si2303BDS-T1 Si2303BDS-T1-E3 (Lead (Pb)-
si2303.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2303P-Channel, 30-V (D-S) MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)b0.240 @ VGS = 10 V 1.4300.460 @ VGS = 4.5 V 1.0TO-236(SOT-23)G 13 DS 2Top ViewSi2303DS (A3T)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol 5 sec Steady State UnitDrain-Source V
si2303ds-3.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2303DS (KI2303DS)SOT-23-3Unit: mm+0.22.9-0.1 Features+0.10.4 -0.1 VDS (V) =-30V3 RDS(ON) 200m (VGS =-10V) RDS(ON) 380m (VGS =-4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Ratin
si2303ds.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2303DS (KI2303DS) FeaturesSOT-23Unit: mm+0.1 VDS (V) =-30V2.9 -0.1+0.10.4-0.1 RDS(ON) 200m (VGS =-10V)3 RDS(ON) 380m (VGS =-4.5V)1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1G 13 D1.Gate2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit
si2303bds.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2303BDS (KI2303BDS) FeaturesSOT-23Unit: mm+0.1 VDS (V) =-30V2.9 -0.1+0.10.4 -0.1 RDS(ON) 200m (VGS =-10V)3 RDS(ON) 380m (VGS =-4.5V)1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1G 13 D1.GateS 22.Source3.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec Steady
si2303bds-3.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2303BDS (KI2303BDS)SOT-23-3Unit: mm+0.22.9 -0.1+0.1 Features0.4 -0.13 VDS (V) =-30V RDS(ON) 200m (VGS =-10V) RDS(ON) 380m (VGS =-4.5V)1 2+0.02+0.10.15 -0.020.95-0.1+0.1G 1 1.9-0.23 DS 21.Gate2.Source3.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol 5 sec St
si2303 ki2303.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2303 (KI2303)SOT-23-3Unit: mm+0.22.9-0.1 Features+0.10.4 -0.1 VDS (V) =-30V3 RDS(ON) 200m (VGS =-10V) RDS(ON) 380m (VGS =-4.5V)1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Un
si2303.pdf
RUMW UMW SI2303 SOT-23 Plastic-Encapsulate MOSFETSP-channel 30-V(D-S) MOSFETSI2303V(BR)DSS RDS(on)MAX ID190m@-10V-30 V -1.7A330m@-4.5VFEATURE TrenchFET Power MOSFETSOT23 APPLICATION Load Switch for Portable Devices DC/DC Converter1. GATE MARKING Equivalent Circuit2. SOURCE 3. DRAIN Maximum ratings ( Ta=25 unless otherwise noted)Parame
si2303.pdf
SOT-23 Plastic-Encapsulate MOSFETSSI2303P-Channel, 30-V (D-S) MOSFETPRODUCT SUMMARYSOT-23VDS (V) rDS(on) (W) ID (A)b0.240 @ VGS = 10 V 1.430 30.460 @ VGS = 4.5 V 1.01.GATE2.SOURCE3.DRAINGeneral FEATURE 12TrenchFET Power MOSFETLead free product is acquiredMARKING Equivalent CircuitSurface mount packageAPPLICATIONA96TF wLoad Switc
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